- 您現(xiàn)在的位置：買(mǎi)賣IC網(wǎng) > PDF目錄358974 > M25P64-VMF6 (意法半導(dǎo)體) 4 Mbit Uniform Sector, Serial Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | M25P64-VMF6 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門(mén)，串行閃存 |
| 文件頁(yè)數(shù)： | 23/38頁(yè) |
| 文件大?。?/td> | 519K |
| 代理商： | M25P64-VMF6 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)當(dāng)前第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)
23/38
M25P64
Sector Erase (SE)
The Sector Erase (SE) instruction sets to 1 (FFh)
all bits inside the chosen sector. Before it can be
accepted, a Write Enable (WREN) instruction
must previously have been executed. After the
Write Enable (WREN) instruction has been decod-
ed, the device sets the Write Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by
driving Chip Select (S) Low, followed by the in-
struction code, and three address bytes on Serial
Data Input (D). Any address inside the Sector (see
Table 3.
) is a valid address for the Sector Erase
(SE) instruction. Chip Select (S) must be driven
Low for the entire duration of the sequence.
The instruction sequence is shown in
Figure 17.
.
Chip Select (S) must be driven High after the
eighth bit of the last address byte has been latched
in, otherwise the Sector Erase (SE) instruction is
not executed. As soon as Chip Select (S) is driven
High, the self-timed Sector Erase cycle (whose du-
ration is t
SE
) is initiated. While the Sector Erase cy-
cle is in progress, the Status Register may be read
to check the value of the Write In Progress (WIP)
bit. The Write In Progress (WIP) bit is 1 during the
self-timed Sector Erase cycle, and is 0 when it is
completed. At some unspecified time before the
cycle is completed, the Write Enable Latch (WEL)
bit is reset.
A Sector Erase (SE) instruction applied to a page
which is protected by the Block Protect (BP2, BP1,
BP0) bits (see
Table 2.
and
Table 3.
) is not execut-
ed.
Figure 17. Sector Erase (SE)
Instruction Sequence
Note: Address bit A23 is Don’t Care.
24 Bit Address
C
D
AI03751D
S
2
1
3
4
5
6
7
8
9
29 30 31
Instruction
0
23 22
2
0
1
MSB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25P64-VME6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P64-VME6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P64-VME6T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P64-VME6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P64-VME6G | 4 Mbit Uniform Sector, Serial Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P64-VMF6G | 功能描述:閃存 LOW VOLT 64Mbit RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25P64VMF6P | 制造商:NUMO 功能描述: |
| M25P64-VMF6P | 功能描述:閃存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25P64-VMF6P | 制造商:Micron Technology Inc 功能描述:SEMICONDUCTOR: PENDING |
| M25P64-VMF6PBA | 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3.3V 64Mbit 8M x 8bit 8ns 16-Pin SOIC W Tray 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays 制造商:Micron Technology 功能描述:NOR Flash Serial-SPI 3.3V 64Mbit 8M x 8bit 8ns 16-Pin SOIC W Tray |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。