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參數(shù)資料
| 型號(hào)： | M25P32VMP6T |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁(yè)數(shù)： | 15/39頁(yè) |
| 文件大?。?/td> | 506K |
| 代理商： | M25P32VMP6T |
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M25P32
22/39
Sector Erase (SE)
The Sector Erase (SE) instruction sets to 1 (FFh)
all bits inside the chosen sector. Before it can be
accepted, a Write Enable (WREN) instruction
must previously have been executed. After the
Write Enable (WREN) instruction has been decod-
ed, the device sets the Write Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by
driving Chip Select (S) Low, followed by the in-
struction code, and three address bytes on Serial
Data Input (D). Any address inside the Sector (see
Table 3.) is a valid address for the Sector Erase
(SE) instruction. Chip Select (S) must be driven
Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 17..
Chip Select (S) must be driven High after the
eighth bit of the last address byte has been latched
in, otherwise the Sector Erase (SE) instruction is
not executed. As soon as Chip Select (S) is driven
High, the self-timed Sector Erase cycle (whose du-
ration is tSE) is initiated. While the Sector Erase cy-
cle is in progress, the Status Register may be read
to check the value of the Write In Progress (WIP)
bit. The Write In Progress (WIP) bit is 1 during the
self-timed Sector Erase cycle, and is 0 when it is
completed. At some unspecified time before the
cycle is completed, the Write Enable Latch (WEL)
bit is reset.
A Sector Erase (SE) instruction applied to a page
which is protected by the Block Protect (BP2, BP1,
ed.
Figure 17. Sector Erase (SE) Instruction Sequence
Note: Address bits A23 to A22 are Don’t Care.
24 Bit Address
C
D
AI03751D
S
2
1
3456789
29 30 31
Instruction
0
23 22
2
0
1
MSB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25P32VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P32VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P40SVMN6P/4 | 512K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| M25P40SVMN3G/4A | 512K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| M25P40-VMN6TG/X | 512K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25P32VMP6TG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P32-VMP6TG | 功能描述:閃存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M25P32VMP6TP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P32-VMP6TP | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:32-Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface |
| M25P32-VMS6G | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays |
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