參數(shù)資料
型號(hào)： M25P16-VMW6G
廠商： 意法半導(dǎo)體
元件分類： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門，串行閃存
文件頁(yè)數(shù)： 12/55頁(yè)
文件大?。?/td> 335K
代理商： M25P16-VMW6G
Operating features
M25P16
12/55
4
Operating features
4.1
Page programming
To program one data byte, two instructions are required: Write Enable (WREN), which is one
byte, and a Page Program (PP) sequence, which consists of four bytes plus data. This is
followed by the internal Program cycle (of duration t
PP
).
To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be
programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive
addresses on the same page of memory.
For optimized timings, it is recommended to use the Page Program (PP) instruction to
program all consecutive targeted Bytes in a single sequence versus using several Page
Program (PP) sequences with each containing only a few Bytes (see
Page Program (PP)
and
Table 15: AC characteristics (Grade 6)
).
4.2
Sector Erase and Bulk Erase
The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be
applied, the bytes of memory need to have been erased to all 1s (FFh). This can be
achieved either a sector at a time, using the Sector Erase (SE) instruction, or throughout the
entire memory, using the Bulk Erase (BE) instruction. This starts an internal Erase cycle (of
duration t
SE
or t
BE
).
The Erase instruction must be preceded by a Write Enable (WREN) instruction.
4.3
Polling during a Write, Program or Erase cycle
A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase
(SE or BE) can be achieved by not waiting for the worst case delay (t
W
, t
PP
, t
SE
, or t
BE
). The
Write In Progress (WIP) bit is provided in the Status Register so that the application program
can monitor its value, polling it to establish when the previous Write cycle, Program cycle or
Erase cycle is complete.
4.4
Active Power, Stand-by Power and Deep Power-Down modes
When Chip Select (S) is Low, the device is selected, and in the Active Power mode.
When Chip Select (S) is High, the device is deselected, but could remain in the Active Power
mode until all internal cycles have completed (Program, Erase, Write Status Register). The
device then goes in to the Stand-by Power mode. The device consumption drops to I
CC1
.
The Deep Power-down mode is entered when the specific instruction (the Deep Power-
down (DP) instruction) is executed. The device consumption drops further to I
CC2
. The
device remains in this mode until another specific instruction (the Release from Deep
Power-down and Read Electronic Signature (RES) instruction) is executed.
While in the Deep Power-down mode, the device ignores all Write, Program and Erase
instructions (see
Deep Power-down (DP)
). This can be used as an extra software protection
mechanism, when the device is not in active use, to protect the device from inadvertent
Write, Program or Erase instructions.
相關(guān)PDF資料
PDF描述
M25P16-VMW6P 4 Mbit Uniform Sector, Serial Flash Memory
M25P16-VMW6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25P16-VMW6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25P16-VME3G 4 Mbit Uniform Sector, Serial Flash Memory
M25P16-VME3P 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25P16-VMW6P 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface
M25P16-VMW6T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit, serial Flash memory, 75 MHz SPI bus interface
M25P16-VMW6TG 功能描述:閃存 16MBIT SFLASH MEM RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25P16-VMW6TP 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit, serial Flash memory, 75 MHz SPI bus interface
M25P16-VMW6YG 制造商:Micron Technology Inc 功能描述:16 MBIT, SERIAL FLASH MEMORY, 75 MHZ SPI BUS INTERFACE - Trays
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