參數(shù)資料
型號(hào): M25P16-VMW3TG
廠商: 意法半導(dǎo)體
元件分類(lèi): DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門(mén),串行閃存
文件頁(yè)數(shù): 19/55頁(yè)
文件大?。?/td> 335K
代理商: M25P16-VMW3TG
M25P16
Instructions
19/55
Table 4.
6.1
Write Enable (WREN)
The Write Enable (WREN) instruction (
Figure 8
) sets the Write Enable Latch (WEL) bit.
The Write Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector
Erase (SE), Bulk Erase (BE) and Write Status Register (WRSR) instruction.
The Write Enable (WREN) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
Figure 8.
Write Enable (WREN) instruction sequence
Instruction set
Instruction
Description
One-byte Instruction
Code
Address
Bytes
Dummy
Bytes
Data
Bytes
WREN
Write Enable
0000 0110
06h
0
0
0
WRDI
Write Disable
0000 0100
04h
0
0
0
RDID
Read Identification
1001 1111
9Fh
0
0
1 to 3
RDSR
Read Status Register
0000 0101
05h
0
0
1 to
WRSR
Write Status Register
0000 0001
01h
0
0
1
READ
Read Data Bytes
0000 0011
03h
3
0
1 to
FAST_READ Speed
0000 1011
0Bh
3
1
1 to
PP
Page Program
0000 0010
02h
3
0
1 to 256
SE
Sector Erase
1101 1000
D8h
3
0
0
BE
Bulk Erase
1100 0111
C7h
0
0
0
DP
Deep Power-down
1011 1001
B9h
0
0
0
RES
Release from Deep
Power-down, and Read
Electronic Signature
1010 1011
ABh
0
3
1 to
Release from Deep
Power-down
0
0
0
C
D
AI02281E
S
Q
2
1
3
4
5
6
7
High Impedance
0
Instruction
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