參數(shù)資料
型號: M25P16-VMN6P
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 36/55頁
文件大?。?/td> 335K
代理商: M25P16-VMN6P
Power-up and Power-down
M25P16
36/55
Figure 21.
Power-up timing
Table 8.
1.
These parameters are characterized only.
Power-Up timing and VWI threshold
Symbol
Parameter
Min.
Max.
Unit
t
VSL(1)
t
PUW(1)
V
WI(1)
V
CC
(min) to S Low
30
μs
Time delay to Write instruction
1
10
ms
Write Inhibit Voltage
1.5
2.5
V
VCC
AI04009C
VCC(min)
VWI
Reset State
of the
Device
Chip Selection Not Allowed
Program, Erase and Write Commands are Rejected by the Device
tVSL
tPUW
time
Read Access allowed
Device fully
accessible
VCC(max)
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