參數(shù)資料
型號: M25P16-VMN3P
廠商: 意法半導體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 1/55頁
文件大?。?/td> 335K
代理商: M25P16-VMN3P
January 2007
Rev 10
1/55
1
M25P16
16 Mbit, low voltage, Serial Flash memory
with 50 MHz SPI bus interface
Features
16 Mbit of Flash memory
Page Program (up to 256 Bytes) in 0.64ms
(typical)
Sector Erase (512 Kbit) in 0.6s (typical)
Bulk Erase (16 Mbit) in 13s (typical)
2.7 V to 3.6 VV Single Supply Voltage
SPI Bus Compatible Serial Interface
50 MHz Clock Rate (maximum)
Deep Power-down Mode 1μA (typical)
Electronic Signatures
– JEDEC standard two-byte signature
(2015h)
– RES instruction, one-byte, signature (14h),
for backward compatibility
More than 100 000 Erase/Program cycles per
Sector
Hardware Write Protection: protected area size
defined by three non-volatile bits (BP0, BP1
and BP2)
More than 20 year data retention
Packages
– ECOPACK (RoHS compliant)
VDFPN8 (ME)
8x6mm (MLP8)
SO16 (MF)
300 mils width
VFQFPN8 (MP)
6 × 5 mm (MLP8)
SO8N (MN)
150 mils width
SO8W (MW)
208 mils width
www.st.com
相關PDF資料
PDF描述
M25P16-VMN3TG 4 Mbit Uniform Sector, Serial Flash Memory
M25P16-VMN3TP 4 Mbit Uniform Sector, Serial Flash Memory
M25P16-VMN6G 4 Mbit Uniform Sector, Serial Flash Memory
M25P16-VMN6P 4 Mbit Uniform Sector, Serial Flash Memory
M25P16-VMN6TG 4 Mbit Uniform Sector, Serial Flash Memory
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