參數(shù)資料
型號(hào): M25P16-VMF3TP
廠商: 意法半導(dǎo)體
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 54/55頁
文件大小: 335K
代理商: M25P16-VMF3TP
Revision history
M25P16
54/55
10-Oct-2006
9
Page Program, Sector Erase and Bulk Erase updated in
Features
.
V
IO
max modified in
Table 9: Absolute maximum ratings
.
Table 16: AC characteristics (Grade 6, T9HX (0.11μm) technology)
added.
VFQFPN8 package specifications updated (see
Table 18
).
Note 1
added
to
Table 19
.
Note: on page 52
modified.
09-Jan-2006
10
Small text changes. Hardware Write protection added to
Features
.
VCC supply voltage
and
VSS ground
signal descriptions added.
Figure 4:
Bus master and memory devices on the SPI bus
modified, note 2
removed and replaced by an explanatory paragraph. Write In Progress bit
behavior specified at Power-up (see
Section 7: Power-up and Power-
down
). T
LEAD
added to
Table 9: Absolute maximum ratings
. Grade 3
temperature range added.
Table 11: Data retention and endurance
and
Table 17: AC characteristics
(25 MHz operation, Grade 3)
added.
SO8W and VFQFPN8 package specifications updated (see
Section 11:
Package mechanical
).
Table 24.
Document revision history (continued)
Date
Revision
Changes
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