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參數(shù)資料
| 型號(hào)： | M24C16RMN6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | CERAMIC RESONATOR 6.0 MHZ W/CAP |
| 中文描述： | 16Kbit，8Kbit，4Kbit，2Kbit和1Kbit串行I2C總線的EEPROM |
| 文件頁數(shù)： | 14/25頁 |
| 文件大小： | 449K |
| 代理商： | M24C16RMN6T |
M24C16, M24C08, M24C04, M24C02, M24C01
14/25
Table 9. DC Characteristics (M24Cxx-W, Device Grade 3)
Note: 1. The voltage source driving only E0, E1 and E2 inputs must provide an impedance of less than 1kOhm.
Table 10. DC Characteristics (M24Cxx-R)
Note: 1. The voltage source driving only E0, E1 and E2 inputs must provide an impedance of less than 1kOhm.
Table 11. AC Measurement Conditions
Symbol
Parameter
Test Condition
(in addition to those in
Table 6.
)
Min.
Max.
Unit
I
LI
Input Leakage Current
(SCL, SDA, E0, E1,and E2)
V
IN
= V
SS
or
V
CC
± 2
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
or
V
CC,
SDA in Hi-Z
± 2
μA
I
CC
Supply Current
V
CC
=5V, f
C
=400kHz (rise/fall time < 30ns)
3
mA
V
CC
=2.5V, f
C
=400kHz
(rise/fall time < 30ns)
3
mA
I
CC1
Stand-by Supply Current
V
IN
= V
SS
or
V
CC
, V
CC
= 5 V
5
μA
V
IN
= V
SS
or
V
CC
, V
CC
= 2.5 V
2
μA
V
IL
Input Low Voltage
(1)
–0.45
0.3V
CC
V
V
IH
Input High Voltage
(1)
0.7V
CC
V
CC
+1
V
V
OL
Output Low Voltage
I
OL
= 2.1 mA, V
CC
= 2.5 V
0.4
V
Symbol
Parameter
Test Condition
(in addition to those in
Table 7.
)
Min.
Max.
Unit
I
LI
Input Leakage Current
(SCL, SDA, E0, E1,and E2)
V
IN
= V
SS
or
V
CC
± 2
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
or
V
CC,
SDA in Hi-Z
± 2
μA
I
CC
Supply Current
V
CC
=1.8V, f
c
=400kHz (rise/fall time < 30ns)
0.8
mA
I
CC1
Stand-by Supply Current
V
IN
= V
SS
or
V
CC
, V
CC
= 1.8 V
0.3
μA
V
IL
Input Low Voltage
(1)
2.5 V
≤
V
CC
–0.45
0.3 V
CC
V
1.8 V
≤
V
CC
<
2.5 V
–0.45
0.25 V
CC
V
V
IH
Input High Voltage
(1)
0.7V
CC
V
CC
+1
V
V
OL
Output Low Voltage
I
OL
= 0.7 mA, V
CC
= 1.8 V
0.2
V
Symbol
Parameter
Min.
Max.
Unit
C
L
Load Capacitance
100
pF
Input Rise and Fall Times
50
ns
Input Levels
0.2V
CC
to 0.8V
CC
V
Input and Output Timing Reference Levels
0.3V
CC
to 0.7V
CC
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M24C16-RMN6T | 功能描述:電可擦除可編程只讀存儲(chǔ)器 5.5V 16K (2Kx8) RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M24C16-RMN6TP | 功能描述:電可擦除可編程只讀存儲(chǔ)器 16Kbit 8Kbit 4Kbit 2Kb and 1Kb Serial RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M24C16-RMNMTK | 制造商:STMicroelectronics 功能描述:16 KB I2C EEPROM, PRE-PROGRAMMED FOR MTK |
| M24C16WBN6 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| M24C16-WBN6 | 功能描述:電可擦除可編程只讀存儲(chǔ)器 5.5V 16K (2Kx8) RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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