參數(shù)資料
型號: M24C16-RDW3TG
廠商: 意法半導體
元件分類: DRAM
英文描述: The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
中文描述: 該CAT24FC02是一個2 KB的EEPROM的國內(nèi)256個8位每字舉辦的串行CMOS
文件頁數(shù): 14/25頁
文件大?。?/td> 449K
代理商: M24C16-RDW3TG
M24C16, M24C08, M24C04, M24C02, M24C01
14/25
Table 9. DC Characteristics (M24Cxx-W, Device Grade 3)
Note: 1. The voltage source driving only E0, E1 and E2 inputs must provide an impedance of less than 1kOhm.
Table 10. DC Characteristics (M24Cxx-R)
Note: 1. The voltage source driving only E0, E1 and E2 inputs must provide an impedance of less than 1kOhm.
Table 11. AC Measurement Conditions
Symbol
Parameter
Test Condition
(in addition to those in
Table 6.
)
Min.
Max.
Unit
I
LI
Input Leakage Current
(SCL, SDA, E0, E1,and E2)
V
IN
= V
SS
or
V
CC
± 2
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
or
V
CC,
SDA in Hi-Z
± 2
μA
I
CC
Supply Current
V
CC
=5V, f
C
=400kHz (rise/fall time < 30ns)
3
mA
V
CC
=2.5V, f
C
=400kHz
(rise/fall time < 30ns)
3
mA
I
CC1
Stand-by Supply Current
V
IN
= V
SS
or
V
CC
, V
CC
= 5 V
5
μA
V
IN
= V
SS
or
V
CC
, V
CC
= 2.5 V
2
μA
V
IL
Input Low Voltage
(1)
–0.45
0.3V
CC
V
V
IH
Input High Voltage
(1)
0.7V
CC
V
CC
+1
V
V
OL
Output Low Voltage
I
OL
= 2.1 mA, V
CC
= 2.5 V
0.4
V
Symbol
Parameter
Test Condition
(in addition to those in
Table 7.
)
Min.
Max.
Unit
I
LI
Input Leakage Current
(SCL, SDA, E0, E1,and E2)
V
IN
= V
SS
or
V
CC
± 2
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
or
V
CC,
SDA in Hi-Z
± 2
μA
I
CC
Supply Current
V
CC
=1.8V, f
c
=400kHz (rise/fall time < 30ns)
0.8
mA
I
CC1
Stand-by Supply Current
V
IN
= V
SS
or
V
CC
, V
CC
= 1.8 V
0.3
μA
V
IL
Input Low Voltage
(1)
2.5 V
V
CC
–0.45
0.3 V
CC
V
1.8 V
V
CC
<
2.5 V
–0.45
0.25 V
CC
V
V
IH
Input High Voltage
(1)
0.7V
CC
V
CC
+1
V
V
OL
Output Low Voltage
I
OL
= 0.7 mA, V
CC
= 1.8 V
0.2
V
Symbol
Parameter
Min.
Max.
Unit
C
L
Load Capacitance
100
pF
Input Rise and Fall Times
50
ns
Input Levels
0.2V
CC
to 0.8V
CC
V
Input and Output Timing Reference Levels
0.3V
CC
to 0.7V
CC
V
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