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參數(shù)資料
| 型號： | M24512-RDW6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 512 Kbit Serial I睠 Bus EEPROM |
| 中文描述： | 512千位串行I眷總線的EEPROM |
| 文件頁數(shù)： | 23/24頁 |
| 文件大小： | 379K |
| 代理商： | M24512-RDW6T |
23/24
M24512
REVISION HISTORY
Table 21. Document Revision History
Date
Revision
Description of Revision
29-Jan-2001
1.1
Lead Soldering Temperature in the Absolute Maximum Ratings table amended
Write Cycle Polling Flow Chart using ACK illustration updated
LGA8 and SO8(wide) packages added
References to PSDIP8 changed to PDIP8, and Package Mechanical data updated
10-Apr-2001
1.2
LGA8 Package Mechanical data and illustration updated
SO16 package removed
16-Jul-2001
1.3
LGA8 Package given the designator “LA”
02-Oct-2001
1.4
LGA8 Package mechanical data updated
13-Dec-2001
1.5
Document becomes Preliminary Data
Test conditions for ILI, ILO, ZL and ZH made more precise
VIL and VIH values unified. tNS value changed
12-Jun-2001
1.6
Document promoted to Full Datasheet
22-Oct-2003
2.0
Table of contents, and Pb-free options added. Minor wording changes in Summary
Description, Power-On Reset, Memory Addressing, Write Operations, Read Operations.
V
IL
(min) improved to –0.45V.
02-Sep-2004
3.0
LGA8 package is Not for New Design. 5V and -S supply ranges, and Device Grade 5
removed. Absolute Maximum Ratings for V
IO
(min) and V
CC
(min) changed. Soldering
temperature information clarified for RoHS compliant devices. Device grade information
clarified. AEC-Q100-002 compliance. V
IL
specification unified for SDA, SCL and WC
22-Feb-2005
4.0
INITIAL DELIVERY STATE
is FFh (not necessarily the same as Erased).
LGA package removed, TSSOP8 and SO8N packages added (see
PACKAGE
MECHANICAL
section and
Table 20., Ordering Information Scheme
).
Voltage range R (1.8V to 5.5V) also offered. Minor wording changes.
Z
L
Test Conditions modified in
Table 11., Input Parameters
and Note
3.
added.
I
CC
and I
CC1
values for V
CC
= 5.5V added to
Table 12., DC Characteristics (M24512 – W)
.
Note added to
Table 12., DC Characteristics (M24512 – W)
.
Power On Reset
paragraph specified.
t
W
max value modified in
Table 14., AC Characteristics (M24512 – W)
and note 4 added.
Plating technology changed in
Table 20., Ordering Information Scheme
.
Resistance and capacitance renamed in
Figure 4., Maximum R
P
Value versus Bus
Parasitic Capacitance (C) for an I
2
C Bus
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M24512-RDW6 | 512 Kbit Serial I睠 Bus EEPROM |
| M24512-RBN6T | 512 Kbit Serial I睠 Bus EEPROM |
| M24512-RBN6 | 512 Kbit Serial I睠 Bus EEPROM |
| M24512 | 512 Kbit Serial I睠 Bus EEPROM |
| M24512MJ | 512 Kbit Serial I睠 Bus EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M24512-RDW6TG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit and 256 Kbit Serial I2C bus EEPROM with three Chip Enable lines |
| M24512-RDW6TP | 功能描述:電可擦除可編程只讀存儲器 512Kb and 256Kb Ser RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M24512-RMB6TG | 功能描述:電可擦除可編程只讀存儲器 512 Kbit Serial I2C 電可擦除可編程只讀存儲器 3 Chip RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M24512-RMC6TG | 功能描述:電可擦除可編程只讀存儲器 512Kit I2C EEProm 128kB 1 MHz 1.7 5.5V RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M24512-RMN6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit Serial I睠 Bus EEPROM |
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