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參數(shù)資料
| 型號： | M22102 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | WITH CONTROL MEMORY 4 X 4 X 2 CROSSPOINT SWITCHES |
| 中文描述： | 控制內(nèi)存與4 × 4 × 2交叉點(diǎn)開關(guān) |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 157K |
| 代理商： | M22102 |
STATIC ELECTRICAL CHARACTERISTICS
(over recommended operating conditions)
Symbol
Parameter
Test Conditios
Value
25
o
C
Typ.
Unit
V
I
(V)
V
DD
(V)
T
LOW
*
Min.
T
HIGH
*
Min.
Max.
Min.
Max.
Max.
CROSSPOINT
I
L
Quiescent
Supply
Current
F1
5
0.04
0.04
0.04
0.08
0.04
0.04
0.04
225
85
75
65
225
85
75
65
35
20
18
15
5
150
300
600
3000
150
300
600
1625
230
175
125
1440
205
155
110
μ
A
10
15
20
5
10
15
5
10
12
15
5
10
12
15
5
10
12
15
10
20
100
20
40
80
1250
180
135
95
1250
180
135
95
B1
R
ON
On
Resistance
F1
Any Switch
450
135
100
70
1000
145
110
75
B1
V
IS
= 0 to V
DD
ON
Resistance
R
ON
(Between any two
channels)
OFF
Channel
Leakage
Current
F1
All Switch
OFF
0/18
18
±
0.1
±
10
-3
±
0.1
±
1
μ
A
B1
0/15
15
±
0.3
±
10
-3
±
0.3
±
1
CONTROL
V
IL
Input Low
Voltage
OFF Switch
I
L
< 0.2
μ
A
5
1.5
3
4
1.5
3
4
1.5
3
4
V
10
15
5
10
15
18
15
V
IH
Input High
Voltage
ON Switch
see R
ON
Characteristics
3.5
7
11
3.5
7
11
3.5
7
11
V
I
I
Input
Current
F1
B1
Any Control
Input
0/18
0/15
±
0.1
±
0.3
±
10
-5
±
10
-5
5
±
0.1
±
0.3
7.5
±
1
±
1
μ
A
C
I
Input Capacitance
Any Input
pF
Determined by minimum feasible leakage measurement forautomatic testing
* T
LOW
= -55
o
C for
HCC
device: -40
o
C for
HCF
device.
* T
HIGH
=+125
o
Cfor
HCC
device: +85
o
C for
HCF
device.
TheNoise Margin for both ”1” and”0” level is: 1Vmin.withV
DD
=5V, 2 V min. with V
DD
=10 V, 2.5 Vmin. withV
DD
= 15V
M22101/M22102
4/8
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| M22102B1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:WITH CONTROL MEMORY 4 X 4 X 2 CROSSPOINT SWITCHES |
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| M2210-SLATE-1000 | 制造商:Alpha Wire 功能描述: |
| M-2210T | 制造商:ETC MOLEX-INACTIVE 功能描述:Cross Referenced to MOLEX - Part: MOL19003-0067 |
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