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參數(shù)資料
| 型號(hào)： | M2035S |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | High-Voltage Trench MOS Barrier Schottky Rectifier |
| 中文描述： | 高電壓海溝MOS肖特基勢壘整流器 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 129K |
| 代理商： | M2035S |
Vishay General Semiconductor
M2035S & M2045S
Document Number 88953
24-Jul-06
www.vishay.com
1
High-Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, free-wheeling diodes,
dc-to-dc converters or polarity protection applications.
MECHANICAL DATA
Case:
TO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
TO-220AB
1
2
3
1
2
CASE
3
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
20 A
35 V, 45 V
200 A
V
F
at I
F
= 20 A
T
j
max.
0.55 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M2035S
M2045S
UNIT
Maximum repetitive peak reverse voltage
V
RRM
I
F(AV)
35
45
V
Maximum average forward rectified current (see Fig. 1)
20
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
200
A
Peak repetitive reverse current per leg at t
p
= 2 μs, 1 kHz
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
I
RRM
dv/dt
2.0
A
10000
V/μs
T
J
, T
STG
- 55 to + 150
°C
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