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參數(shù)資料
| 型號： | M1MA152KT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.1 A, SILICON, SIGNAL DIODE |
| 封裝： | LEAD FREE, CASE 318D-04, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 44K |
| 代理商： | M1MA152KT3G |
Semiconductor Components Industries, LLC, 2005
August, 2005 Rev. 7
1
Publication Order Number:
M1MA151KT1/D
M1MA151KT1,
M1MA152KT1
Preferred Device
Single Silicon Switching
Diodes
These Silicon Epitaxial Planar Diodes are designed for use in ultra
high speed switching applications. These devices are housed in the
SC59 package which is designed for low power surface mount
applications.
Features
Fast trr, < 3.0 ns
Low CD, < 2.0 pF
Available in 8 mm Tape and Reel
Use M1MA151/2KT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel.
PbFree Packages are Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Reverse Voltage
M1MA151KT1
VR
40
Vdc
M1MA152KT1
80
Peak Reverse Voltage
M1MA151KT1
VRM
40
Vdc
M1MA152KT1
80
Forward Current
IF
100
mAdc
Peak Forward Current
IFM
225
mAdc
Peak Forward Surge Current
IFSM
(Note 1)
500
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
55 to + 150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. t = 1 SEC
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
SC59
SUFFIX
CASE 318D
SC59 PACKAGE SINGLE
SILICON SWITCHING DIODES
40/80 V100 mA
SURFACE MOUNT
MARKING DIAGRAM
2
1
3
3 CATHODE
2
ANODE
1
NO CONNECTION
Mx M
G
1
Mx
= Device Code
x
= H for 151
I for 152
M
= Date Code*
G
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
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PDF描述 |
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| M2322ZD320 | 2322 A, 3200 V, SILICON, RECTIFIER DIODE |
| M2322ZD360 | 2322 A, 3600 V, SILICON, RECTIFIER DIODE |
| M2322ZC320 | 2322 A, 3200 V, SILICON, RECTIFIER DIODE |
| M2322ZD340 | 2322 A, 3400 V, SILICON, RECTIFIER DIODE |
| M2408ND020 | 2408 A, 200 V, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M1MA152WA | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Common Anode Silicon Dual Switching Diodes |
| M1MA152WALT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Common Anode Silicon Dual Switching diodes |
| M1MA152WALT1G | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Common Anode Silicon Dual Switching diodes |
| M1MA152WAT1 | 功能描述:二極管 - 通用，功率，開關(guān) 80V 100mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| M1MA152WAT1G | 功能描述:二極管 - 通用，功率，開關(guān) 80V 100mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
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