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參數(shù)資料
| 型號(hào)： | M1MA152KT1 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | SC-59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V-100 mA SURFACE MOUNT |
| 中文描述： | 0.1 A, 80 V, SILICON, SIGNAL DIODE |
| 封裝： | SC-59, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | M1MA152KT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed
switching applications. These devices are housed in the SC–59 package which is
designed for low power surface mount applications.
Fast trr, < 3.0 ns
Low CD, < 2.0 pF
Available in 8 mm Tape and Reel
Use M1MA151/2AT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2AT3 to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS
(TA = 25
°
C)
Rating
Symbol
Value
Unit
Reverse Voltage
M1MA151AT1
VR
40
Vdc
M1MA152AT1
80
Peak Reverse Voltage
M1MA151AT1
VRM
40
Vdc
M1MA152AT1
80
Forward Current
IF
IFM
100
mAdc
Peak Forward Current
225
mAdc
Peak Forward Surge Current
IFSM(1)
500
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
PD
TJ
Tstg
200
mW
Junction Temperature
150
°
C
Storage Temperature
–55 to +150
°
C
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current
M1MA151AT1
IR
VR = 35 V
VR = 75 V
—
0.1
μ
Adc
M1MA152AT1
—
0.1
Forward Voltage
VF
VR
IF = 100 mA
IR = 100
μ
A
—
1.2
Vdc
Reverse Breakdown Voltage
M1MA151AT1
40
—
Vdc
M1MA152AT1
80
—
Diode Capacitance
CD
trr(2)
VR = 0, f = 1.0 MHz
IF = 10 mA, VR = 6.0 V,
RL = 100
, Irr = 0.1 IR
—
2.0
pF
Reverse Recovery Time
—
3.0
ns
1. t = 1 SEC
2. trr Test Circuit
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by M1MA151AT1/D
SEMICONDUCTOR TECHNICAL DATA
SC–59 PACKAGE
SINGLE SILICON
SWITCHING DIODES
40/80 V–100 mA
SURFACE MOUNT
Motorola Preferred Devices
CASE 318D–03, STYLE 4
SC–59
2
1
3
ANODE
3
2
CATHODE
1
NO CONNECTION
REV 3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M1MA152WA | Common Anode Silicon Dual Switching Diodes |
| M1MA152WKT1 | Common Anode Silicon Dual Switching diodes |
| M1MA152WAT1 | Common Anode Silicon Dual Switching diodes |
| M1MA152AT1 | Single Silicon Switching Diodes |
| M1MA152KT1 | Single Silicon Switching Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M1MA152KT1G | 功能描述:二極管 - 通用，功率，開(kāi)關(guān) 80V 100mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| M1MA152WA | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:Common Anode Silicon Dual Switching Diodes |
| M1MA152WALT1 | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:Common Anode Silicon Dual Switching diodes |
| M1MA152WALT1G | 制造商:LRC 制造商全稱(chēng):Leshan Radio Company 功能描述:Common Anode Silicon Dual Switching diodes |
| M1MA152WAT1 | 功能描述:二極管 - 通用，功率，開(kāi)關(guān) 80V 100mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
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