參數(shù)資料
型號(hào): M1MA141WKT3
廠商: ON SEMICONDUCTOR
元件分類: 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率)
英文描述: 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
封裝: SC-70, 3 PIN
文件頁(yè)數(shù): 1/2頁(yè)
文件大小: 123K
代理商: M1MA141WKT3
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SC–70 package which is designed for low
power surface mount applications.
Fast t
rr, < 3.0 ns
Low C
D, < 2.0 pF
Available in 8 mm Tape and Reel
Use M1MA141/2WKT1 to order the 7 inch/3000 unit reel.
Use M1MA141/2WKT3 to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Reverse Voltage
M1MA141WKT1
VR
40
Vdc
g
M1MA142WKT1
R
80
Peak Reverse Voltage
M1MA141WKT1
VRM
40
Vdc
g
M1MA142WKT1
RM
80
Forward Current
Single
IF
100
mAdc
Dual
F
150
Peak Forward Current
Single
IFM
225
mAdc
Dual
FM
340
Peak Forward Surge Current
Single
IFSM(1)
500
mAdc
g
Dual
IFSM
750
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
PD
150
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
–55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current
M1MA141WKT1
IR
VR = 35 V
0.1
Adc
gg
M1MA142WKT1
R
VR = 75 V
0.1
Forward Voltage
VF
IF = 100 mA
1.2
Vdc
Reverse Breakdown Voltage
M1MA141WKT1
VR
IR = 100 A
40
Vdc
g
M1MA142WKT1
R
80
Diode Capacitance
CD
VR = 0, f = 1.0 MHz
2.0
pF
Reverse Recovery Time (Figure 1)
trr(2)
IF = 10 mA, VR = 6.0 V,
RL = 100 , Irr = 0.1 IR
3.0
ns
1. t = 1 SEC
2. trr Test Circuit
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 3
435
Publication Order Number:
M1MA141WKT1/D
M1MA141WKT1
M1MA142WKT1
CASE 419–04, STYLE 5
SC–70/SOT–323
ON Semiconductor Preferred Devices
1
2
3
CATHODE
3
12
ANODE
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