2-36 Revision 13 Timing Characteristics Table 2-43 1.5 V LVCMOS High Slew
參數(shù)資料
型號: M1A3PE1500-1FG676
廠商: Microsemi SoC
文件頁數(shù): 109/162頁
文件大小: 0K
描述: IC FPGA 1KB FLASH 1.5M 676-FBGA
標準包裝: 40
系列: ProASIC3E
RAM 位總計: 276480
輸入/輸出數(shù): 444
門數(shù): 1500000
電源電壓: 1.425 V ~ 1.575 V
安裝類型: 表面貼裝
工作溫度: 0°C ~ 70°C
封裝/外殼: 676-BGA
供應商設備封裝: 676-FBGA(27x27)
ProASIC3E DC and Switching Characteristics
2-36
Revision 13
Timing Characteristics
Table 2-43 1.5 V LVCMOS High Slew
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V
Drive
Strength
Speed
Grade tDOUT
tDP
tDIN
tPY tPYS tEOUT
tZL
tZH
tLZ
tHZ
tZLS
tZHS Units
2 mA
Std.
0.66
8.53
0.04 1.70 2.14
0.43
7.26
8.53
3.39 2.79
9.50
10.77
ns
–1
0.56
7.26
0.04 1.44 1.82
0.36
6.18
7.26
2.89 2.37
8.08
9.16
ns
–2
0.49
6.37
0.03 1.27 1.60
0.32
5.42
6.37
2.53 2.08
7.09
8.04
ns
4 mA
Std.
0.66
5.41
0.04 1.70 2.14
0.43
5.22
5.41
3.75 3.48
7.45
7.65
ns
–1
0.56
4.60
0.04 1.44 1.82
0.36
4.44
4.60
3.19 2.96
6.34
6.50
ns
–2
0.49
4.04
0.03 1.27 1.60
0.32
3.89
4.04
2.80 2.60
5.56
5.71
ns
6 mA
Std.
0.66
4.80
0.04 1.70 2.14
0.43
4.89
4.75
3.83 3.67
7.13
6.98
ns
–1
0.56
4.09
0.04 1.44 1.82
0.36
4.16
4.04
3.26 3.12
6.06
5.94
ns
–2
0.49
3.59
0.03 1.27 1.60
0.32
3.65
3.54
2.86 2.74
5.32
5.21
ns
8 mA
Std.
0.66
4.42
0.04 1.70 2.14
0.43
4.50
3.62
3.96 4.37
6.74
5.86
ns
–1
0.56
3.76
0.04 1.44 1.82
0.36
3.83
3.08
3.37 3.72
5.73
4.98
ns
–2
0.49
3.30
0.03 1.27 1.60
0.32
3.36
2.70
2.96 3.27
5.03
4.37
ns
12 mA
Std.
0.66
4.42
0.04 1.70 2.14
0.43
4.50
3.62
3.96 4.37
6.74
5.86
ns
–1
0.56
3.76
0.04 1.44 1.82
0.36
3.83
3.08
3.37 3.72
5.73
4.98
ns
–2
0.49
3.30
0.03 1.27 1.60
0.32
3.36
2.70
2.96 3.27
5.03
4.37
ns
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values.
Table 2-44 1.5 V LVCMOS Low Slew
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V
Drive
Strength
Speed
Grade tDOUT
tDP
tDIN
tPY tPYS tEOUT
tZL
tZH
tLZ
tHZ
tZLS
tZHS Units
2 mA
Std.
0.66
14.11 0.04 1.70 2.14
0.43
14.37 13.14 3.40 2.68 16.61 15.37
ns
–1
0.56
12.00 0.04 1.44 1.82
0.36
12.22 11.17 2.90 2.28 14.13 13.08
ns
–2
0.49
10.54 0.03 1.27 1.60
0.32
10.73
9.81
2.54 2.00 12.40 11.48
ns
4 mA
Std.
0.66
11.23 0.04 1.70 2.14
0.43
11.44
9.87
3.77 3.36 13.68 12.10
ns
–1
0.56
9.55
0.04 1.44 1.82
0.36
9.73
8.39
3.21 2.86 11.63 10.29
ns
–2
0.49
8.39
0.03 1.27 1.60
0.32
8.54
7.37
2.81 2.51 10.21
9.04
ns
6 mA
Std.
0.66
10.45 0.04 1.70 2.14
0.43
10.65
9.24
3.84 3.55 12.88 11.48
ns
–1
0.56
8.89
0.04 1.44 1.82
0.36
9.06
7.86
3.27 3.02 10.96
9.76
ns
–2
0.49
7.81
0.03 1.27 1.60
0.32
7.95
6.90
2.87 2.65
9.62
8.57
ns
8 mA
Std.
0.66
10.02 0.04 1.70 2.14
0.43
10.20
9.23
3.97 4.22 12.44 11.47
ns
–1
0.56
8.52
0.04 1.44 1.82
0.36
8.68
7.85
3.38 3.59 10.58
9.75
ns
–2
0.49
7.48
0.03 1.27 1.60
0.32
7.62
6.89
2.97 3.15
9.29
8.56
ns
12 mA
Std.
0.66
10.02 0.04 1.70 2.14
0.43
10.20
9.23
3.97 4.22 12.44 11.47
ns
–1
0.56
8.52
0.04 1.44 1.82
0.36
8.68
7.85
3.38 3.59 10.58
9.75
ns
–2
0.49
7.48
0.03 1.27 1.60
0.32
7.62
6.89
2.97 3.15
9.29
8.56
ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-5 for derating values.
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