參數(shù)資料
型號(hào): M13S128168A-5TG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 2M x 16 Bit x 4 Banks Double Data Rate SDRAM
中文描述: 8M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝: 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
文件頁(yè)數(shù): 36/49頁(yè)
文件大?。?/td> 1513K
代理商: M13S128168A-5TG
ES MT
M13S128168A
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2007
Revision : 1.8 36/49
Read with Auto Precharge (@BL=8)
Note 1.
The row active command of the precharge bank can be issued after t
RP
from this point.
The new read/write command of another activated bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same bank is illegal.
C K E
C S
R A S
C A S
BA 0 , BA 1
W E
DQS( CL= 3)
DQ( CL= 3)
0
1
2
3
4
5
6
7
8
9
10
HIGH
D M
CO M M AN D
A
10
/AP
ADDR
(A0~ An )
BAa
Qa4
Qa5
Qa7
Qa6
BAa
t
R P
Qa0
Qa1
Qa3
Qa2
ACTIVE
READ
C a
Au t o p r e c h ar g e s t a r t
Note1
C L K
C L K
R a
R a
相關(guān)PDF資料
PDF描述
M13S128168A-6BG 2M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S128168A-6T 2M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S128168A-6TG 2M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S128168A-7.5AB 2M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S128324A 1M x 32 Bit x 4 Banks Double Data Rate SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M13S128168A-5TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S128168A-6BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S128168A-6BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S128168A-6T 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Double Data Rate SDRAM
M13S128168A-6TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Double Data Rate SDRAM