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參數(shù)資料
| 型號： | M116 |
| 廠商： | CALOGIC LLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier |
| 中文描述： | 50 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72 |
| 封裝： | HERMETIC SEALED PACKAGE-4 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 19K |
| 代理商： | M116 |
Diode ProtectedN-Channel
Enhancement Mode MOSFET
General Purpose Ampifier
M116
FEATURES
Low I
GSS
Integrated Zener Clamp for Gate Protection
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate to Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Gate Zener Current . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
0.1mA
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +125
o
C
Lead Temperature (Soldering, 10sec). . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . 2.2mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
M116
XM116
Package
Hermetic TO-72
Sorted Chips in Carriers
Temperature Range
-55
o
C to +125
o
C
-55
o
C to +125
o
C
C ORPORATION
PIN CONFIGURATION
TO-72
G
D
C
S
1003Z
DEVICE SCHEMATIC
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX
100
200
5
UNITS
TEST CONDITIONS
r
DS(on)
Drain Source ON Resistance
V
GS
= 20V, I
D
= 100
μ
A
V
GS
= 10V, I
D
= 100
μ
A
V
GS
= V
DS
, I
D
= 10
μ
A
I
D
= 1
μ
A, V
GS
= 0
I
S
= 1
μ
A, V
GD
= V
BD
= 0
I
G
= 10
μ
A, V
SB
= V
DB
= 0
V
DS
= 20V, V
GS
= 0
V
SD
= 20V, V
GD
= V
BD
= 0
V
GS
= 20V, V
DS
= 0
V
GS(th)
BV
DSS
BV
SDS
BV
GBS
I
D(OFF)
I
S(OFF)
I
GSS
C
gs
C
gd
C
db
C
iss
Gate Threshold Voltage
Drain-Source Breakdown Voltage
Source-Drain Breakdown Voltage
Gate-Body Breakdown Voltage
Drain Cuttoff Current
Source Cutoff Current
Gate-Body Leakage
Gate-Source (Note 1)
Gate-Drain Capacitance (Note 1)
Drain-Body Capacitance (Note 1)
Input Capacitance (Note 1)
1
30
30
30
V
60
10
10
100
2.5
2.5
7
10
nA
pA
pF
V
GB
= V
DB
= V
SB
= 0, f = 1MHz
Body Guarded
V
GB
= 0, V
DB
= 10V, f = 1MHz
V
GB
= 0, V
DB
= 10V, V
BS
= 0, f = 1MHz
NOTE 1:
For design reference only, not 100% tested.
1
2
3
4
0330
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