參數(shù)資料
型號(hào): LX803
廠商: Polyfet RF Devices
英文描述: SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
中文描述: 硅柵增強(qiáng)型射頻功率LDMOS晶體管
文件頁(yè)數(shù): 1/2頁(yè)
文件大小: 53K
代理商: LX803
RF CHARACTERISTICS ( WATTS OUTPUT )
45
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" process features low
feedback and output capacitances
resulting in high F transistors with
high input impedance and high
efficiency.
45Watts Single Ended
Package Style LX2
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
120 Watts
1.25
C
o
200
-65
to 150
6 A
V
V
V
70
70
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Gps
η
VSWR
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
dB
%
Relative
11
55
1.2
20:1
Idq =
Idq =
Idq =
1.2
1.2
A,
A,
A,
28.0
Vds =
V,
28.0
Vds =
V,
28.0
Vds =
V,
F = 1000MHz
F = 1000MHz
F = 1000MHz
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Ciss
Crss
Coss
Drain Breakdown Voltage
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Forward Transconductance
Saturation Resistance
Saturation Current
Common Source Input Capacitance
Common Source Feedback Capacitance
Common Source Output Capacitance
65
3
1
7
1
2.4
0.35
16.5
90
3
45
Mho
Ohm
Amp
pF
V
V
pF
pF
mA
uA
0.2
Ids =
A,
Vgs = 0V
28.0
Vds =
V,
Vgs = 0V
Vds = 0 V,
Vgs = 30V
0.3
Ids =
A,
Vgs = Vds
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 7.5
Vgs = 20V, Vds = 10V
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
A
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
28.0
Vds =
V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION
SILICON GATE ENHANCEMENT MODE
RF POWER
LDMOS TRANSISTOR
C
o
C
o
C/W
o
LX803
polyfet rf devices
8/31/99
20
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