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參數(shù)資料
| 型號(hào)： | LX7203-15ISMT |
| 廠商： | MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP |
| 元件分類： | 數(shù)據(jù)傳輸濾波器 |
| 英文描述： | 1 FUNCTIONS, DATA LINE FILTER |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 307K |
| 代理商： | LX7203-15ISMT |
LX7203-xx
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
WWW
.Microse
m
i
.CO
M
EMI Filter & ESD Protection for Up Stream USB
Ports
Copyright
2002
Rev. 1.0a, 2002-10-22
I N T E GR A T ED
PRO DUC T S
ABSOLUTE MAXIMUM RATINGS
Steady State Power ................................................................100mW
ESD Air Discharge per IEC61000-4-2.......................................16kV
ESD Contact Discharge per IEC61000-4-2................................10kV
Lead Soldering Temperature (10 Seconds) ............................. 260°C
Operating Temperature ........................................... -40°C to +125°C
Storage Temperature Range .................................... -55°C to +150°C
Note: Exceeding these ratings could cause damage to the device. All voltages are
with
respect to
Ground. Currents are positive into, negative out of specified
terminal
.
TH ERMAL DATA
SM Plastic 6-Pin SC70
THERMAL RESISTANCE
-JUNCTION TO CASE,
θ
JC
119
°C/W
THERMAL RESISTANCE
-JUNCTION TO AMBIENT,
θ
JA
122
°C/W
Junction Temperature Calculation: TJ = TA + (PD x θJA).
The
θJA numbers are guidelines for the thermal performance of the device/pc-board
system. All of the above assume no ambient airflow.
PACKAGE PIN OUT
V
BUS
D
IN
D
IN
D
OUT
D
OUT
GND
1
2
3
4
5
6
from
connector
from
connector
to IC
SM PACKAGE
(Top View)
FUNCTIONAL PIN DESCRIPTION
Name
Description
VBUS
Bus Voltage
DIN
Data In
GND
Ground
DOUT
Data Out
ELECTRICAL CHA RACTERISTICS
Unless otherwise specified, the following specifications apply over the operating ambient temperature -40
°C
≤ T
A ≤ +125°C except where
otherwise noted.
LX7203
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Stand-Off Voltage
VRWM
5.25
V
Breakdown Voltage
VBR
IR = 1mA
6
V
Leakage Current
IR
VRWM = 5.25V, T = 25°C
1
A
Series Resistance (-15)
RS
Each Line
13.5
15
16.5
Series Resistance (-22)
RS
Each Line
19.8
22
24.2
Temperature Coefficient of RS
TCOEFF
Each Line
200
ppm
Pull Up Resistance
RPU
Each Line
1.35
1.5
1.65
K
Capacitor
CEDGE
Each Line
47
pF
Total Capacitance
CTOT
Between I/O Pins and Ground, Each Device
VR = 0V, f = 1MHz
54
60
66
pF
EE
LL
EE
CC
TT
RR
IICC
AA
LL
SS
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