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參數(shù)資料
| 型號： | LX3055 |
| 廠商： | MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP |
| 元件分類： | 光檢測 |
| 英文描述： | FIBER OPTIC PHOTODIODE DETECTOR, 1310-1550nm, 3125Mbps, SURFACE MOUNT |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 291K |
| 代理商： | LX3055 |
LX3055
PRODUCTION DATA SHEET
Obsolete Product – not recommended for new design
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
Copyright
2004
Rev. 1.1, 2005-09-15
WWW
.Microsemi
.CO
M
Coplanar InGaAs/InP PIN Photo Diode
TM
ABSOLU T E MAX I M U M RATINGS
Operating Junction Temperature...................................................................... -20 to +85 °C
Storage Temperature Range ........................................................................... -55 to +125 °C
Maximum Soldering Temperature (10 seconds maximum) ....................................... 260 °C
Note: Exceeding these ratings could cause damage to the device.
PACKAG E PIN OU T
p
Conta
c
t
n
Conta
c
t
(C
a
th
o
de
)
n
Conta
c
t
LX3055
ELEC TR ICAL CHA RACTER ISTIC S
Test conditions: TA = 25°C, VR = 2V
LX3055
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
ELECTRICAL CHARACTERISTICS
Active Area Diameter
60
m
VR = 2V, λ =1550nm
0.85
1.0
Responsivity
1
R
VR = 2V, λ =1310nm
0.80
0.90
A/W
Dark Current
ID
VR = 5V
0.6
6
nA
Breakdown Voltage
BVR
IR = 10A
30
44
V
Capacitance
C
VR = 2V
0.35
0.40
pF
Bandwidth
2
BW
VR = 2V, λ =1550nm @ - 3dB
6.5
8
GHz
Note: 1. Antireflective coating is wavelength @ 1430nm covering 1310 and 1550nm applications
2. Bandwidth is measured @ -3dB electrical power (photocurrent drops to 71% of DC value)
A P P L I C AT I ON CI RC UI TS
R
DIODE
C
SHUNT
L
SER1
R
SER
C
DIODE
L
SER2
CPW
Pads
Figure x –
Typical VRM Application
Results
RSET (Ohm)
LSER1 (pH)
LSER2 (pH)
CSHUNT (fF)
CDIODE (fF)
RDIODE (M Ohm)
LX3055
20.1
1.6
1.5
7.1
311
730
PP
AA
CC
KK
AA
GG
EE
DD
AA
TT
AA
O
B
SO
LETE
PRO
D
UCT
NOT
RECOMMENDED
FOR
NEW
DESIGNS
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