參數(shù)資料
型號： LX2201CLQ-TR
廠商： MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP
元件分類： 電源管理
英文描述： 1-CHANNEL POWER SUPPLY SUPPORT CKT, PQCC20
封裝： 4 X 4 MM, ROHS COMPLIANT, PLASTIC, MLPQ-20
文件頁數(shù)： 5/11頁
文件大?。?/td> 166K
代理商： LX2201CLQ-TR
LX2201
PRODUCTION DATA SHEET
Not Recommended for New Design: See the LX2202
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
Copyright
2000
Rev. 1.3, 2006-02-09
WWW
.M
icrosemi
.CO
M
USB Li-Ion Battery Charger
TM
ELECTRICAL CHA RACTERISTICS
Unless otherwise specified, the following specifications apply over the operating ambient temperature 0
°C
≤ T
A ≤ 70°C except where
otherwise noted and the following test conditions: VDD = 5.0V.
LX2201
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
MAIN CIRCUITRY
Input Voltage
VDD
4.5
6
V
VDD > VBAT
4
8
mA
Quiescent Current
IGND
VDD < VBAT
3
5
A
CTP Bias Voltage
VCTP
RCTP = 150K, IBAT > 100mA
1.25
V
CCP Bias Voltage
VCCP
1.25
V
CUS Bias Voltage
VCUS
2.6
V
CONSTANT VOLTAGE MODE
VM = Low
4.16
4.2
4.24
Constant Voltage Charge Level
VCVL
VM = High
4.06
4.1
4.14
V
Maximum Dropout Voltage
VIN – VBAT
IBAT = 1A
350
mV
Top Off Charge Droop Threshold
VDRP
96
97
98
BAT
CVL
V
%
V
CONSTANT CURRENT MODE
BAT Constant Current Accuracy
ICCL
RCCP = 64.9K
0.85
1
1.15
A
BAT Constant Current Level
IBAT
VBAT < (VCVL – 100mV)
0.35
2
A
Conditioning Current
ICOND
VBAT < VCTV ; @25°C
3.0
4.75
6.0
BAT
CCL
I
%
I
Conditioning Current Mode
Threshold Voltage
VCTV
60
64
68
BAT
CVL
V
%
V
Charge Termination Current
Accuracy
IBAT
RCTP = 150K ; @25°C
35
50
65
mA
USB CURRENT LIMIT
USB Low Current Limit
IIN
VIN = 5V, VDD < VIN, VID1 = Lo, RUSB = 2.55K
85
93
100
mA
USB High Current Limit
IIN
VIN = 5V, VDD < VIN, VID1 = Hi, RUSB = 2.55K
425
463
500
mA
LOGIC
STAT Logic High Output
VSTAT
VIN = 5.0V, ISTAT = -5mA
4.5
5
V
STAT Logic Low Output
VSTAT
VIN = 5.0V, ISTAT = 25A
0.4
V
Logic High
2.0
State Select Threshold
VVID
Logic Low
0.8
V
Logic High
2.0
VM Select Threshold
VVM
Logic Low
0.8
V
THERMAL SHUTDOWN
Maximum Junction Temperature
TJ
VIN = 5.0V, IOUT = 1A, Temperature Rising
130
140
150
°C
BI-DIRECTIONAL PASS ELEMENT CONTROL
Discharge Switch On Resistance
RDS(ON)
IBAT = -1A
130
150
m
Ω
Charging Threshold
VCHG
VIN > VBAT + VCHG
0
5
10
mV
Discharging Threshold
VDCH
VIN > VBAT + VDCH
0
5
10
mV
Pass Element Switch Mode Delay
tsw
Charge–to–discharge or Discharge–to–charge
5
s
PSW FET DRIVER
High Output Voltage
VPSW
VIN < VBAT, IPSW = 0, VBAT = 4.2V
4.1
4.2
V
Low Output Voltage
VPSW
VIN > VBAT, IPSW = 0
0
0.2
V
OR-ing Resistance
RPSW
5
10
15
K
Ω
Switch Delay
(VDD > VBAT to VDD < VBAT)
tPSW
CPSW = 1000pF, to VPSW = (VBAT – 1V)
0
500
1000
Ns
EE
LL
EE
CC
TT
RR
IICC
AA
LL
SS
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