參數(shù)資料
型號: LVT22V10
廠商: NXP Semiconductors N.V.
英文描述: 3V high speed, universal PLD device
中文描述: 3V的高速,通用PLD器件
文件頁數(shù): 5/20頁
文件大小: 185K
代理商: LVT22V10
Philips Semiconductors
Product specification
LVT22V10
3V high speed, universal PLD device
1998 Feb 10
5
DC ELECTRICAL CHARACTERISTICS
Over operating ranges.
SYMBOL
PARAMETER
TEST CONDITIONS
1
LIMITS
UNIT
MIN
MAX
Input voltage
V
IL
V
IH
V
I
Output voltage
Low
High
Clamp
V
CC
= MIN
V
CC
= MAX
V
CC
= MIN, I
IN
= –18mA
0.8
V
V
V
2.0
–1.2
V
CC
= MIN to MAX, V
I
= V
IH
or V
IL
I
OH
= –100
μ
A
I
OH
= –16mA
I
OH
= –5.5 mA
I
OL
= 100
μ
A
I
OL
= 32 mA
I
OL
= 16 mA
V
CC
–0.2
2.0
V
V
OH
High-level output voltage
V
CC
= MIN V = V
I
= V
IH
or V
IL
V
2.4
V
V
CC
= MIN to MAX, V
I
= V
IH
or V
IL
0.2
V
V
OL
Low-level output voltage
V
CC
= MIN V = V
I
= V
IH
or V
IL
0.5
V
0.4
V
Input current
I
IL
I
IH
I
I
I
I
I
BHL
I
BHH
I
BHLO
I
BHHO
Output current
I
OFF
Low
High
Max input current
Pin 1 (program)
Bus hold low sustaining current
2
Bus hold high sustaining current
3
Bus hold low overdrive current
4, 9
Bus hold high overdrive current
5, 9
V
CC
= MAX, V
IN
= 0.0V
V
CC
= MAX, V
IN
= V
CC
V
CC
= MAX, V
IN
= 5.5V
V
CC
= MAX, V
IN
= 5.5V
V
CC
= 3V, V
I
= 0.8V
V
CC
= 3V, V
I
= 2V
V
CC
= 3.6V
V
CC
= 3.6V
–10
10
10
20
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
75
–75
500
–500
Output off current
Current into an output in high state
when V
O
> V
CC
Power-up/down 3-State output
current
8
V
CC
= 0V, V
I
or V
O
= 0 to 4.5V
±
10
μ
A
I
EX
V
O
= 5.5V, V
CC
= 3.0V
±
100
μ
A
I
PU/PD
V
CC
<1.2V; V
O
= 0.5V to V
CC
;
V
I
= GND or V
CC
; OE/OE = X
V
CC
= MAX
V
IN
= V
IL
or V
IH
, V
OUT
= 5.5V
V
IN
= V
IL
or V
IH
, V
OUT
=0V
V
OUT
= 0.5V
V
CC
= 3.6V, Outputs enabled, V
I
= V
CC
or GND; I
O
= 0
100
μ
A
I
OZH
I
OZL
I
SC
I
CC
Ground/V
CC
Bounce
Output leakage
6
Output leakage
6
Short circuit
7
V
CC
supply current
10
–10
–220
170
TYP
μ
A
μ
A
mA
mA
–30
MIN
MAX
UNIT
V
OHV
Maximum dynamic V
OH
V
CC
= 3.0V, 25
°
C,
C
L
= 50pF (including jig capacitance)
2.2
2.3
V
V
OLP
Maximum dynamic V
OL
V
= 3.3V, 25
°
C,
= 50pF
(including jig capacitance)
LVT22V10-7
LVT22V10B7
0.7
1.0
1.1
1.1
V
V
NOTES:
1. These are absolute values with respect to device ground and all overshoots due to system or tester noise are included.
2. The bus hold circuit can sink at least the minimum low sustaining current at V
IL
MAX. I
BHL
should be measured after lowering V
IN
to GND
and then raising it to V
IL
MAX.
3. The bus hold circuit can source at least the minimum high sustaining current at V
IH
MIN. I
BHL
should be measured after raising V
IN
to V
CC
and then lowering it to V
IH MIN.
4. An external driver must source at least I
BHLO
to switch this node from low to high.
5. An external driver must sink at least I
BHHO
6. I/O pin leakage is the worst case of I
OZX
IX
(where X = H or L).
7. No more than one output should be tested at a time. Duration of the short-circuit test should not exceed one second. V
OUT
= 0.5V has been
chosen to avoid test problems caused by tester ground degradation.
8. This parameter is valid for any V
CC
between 0V and 1.2 V with a transition time up to 10 mS. From V
CC
= 1.2 to V
CC
= 3.3V
±
0.3V a
transition time of 100
μ
S is permitted. X = Don’t care.
9. These parameters are not 100% tested, but are evaluated at initial characterization and at any time the design is modified where input
current may be affected.
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