No. 6903-3/14
LV23000M
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
[FM Front End Characteristics] : fc = 98 MHz, fm = 1 kHz, 22.5 kHzdev.
3 dB sensitivity
3 dB LS
60 dBμV EMF, referenced to a 22.5 kHz dev. output,
–3 dB input
12
dBμV
EMF
Practical sensitivity
QS
For a 30 dB signal-to-noise ratio input
12
dBμV
EMF
[FM IF Monaural Characteristics] : fc = 10.7 MHz, fm = 1 kHz, 75 kHzdev.
Demodulator output
V
O
S/N
100 dBμ V, the pin 12 output
210
330
420
mVrms
Signal-to-noise ratio
100 dBμ V, the pin 12 output
68
75
dB
Total harmonic distortion (mono)
THD
100 dBμ V, the pin 12 output
0.3
1.5
%
3 dB sensitivity
3 dB LS
100 dBμ V, referenced to a 75 kHz dev. output, –3 dB input
38
44
dBμV
IF counter sensitivity
IF-C3
SDC0 = 1, SDC1 = 0, the pin 18 (DO) output
41
51
61
dBμV
Muting attenuation
Mute-Att
100 dBμ V, the pin 12 output
68
dB
[FM IF Stereo Characteristics] : fc = 10.7 MHz, fm = 1 kHz, L+R = 90%, Pilot = 10%
Separation
SEP
100 dBμ V, L-mod, Pin 12 output/pin 13 output
28
40
dB
Total harmonic distortion (main)
THD
100 dBμ V, main modulation, the pin 12 output
0.5
1.5
%
[AM Characteristics] : fc = 1000 kHz, fm = 1 kHz, 30% mod
Detector output 1
V
O
1
V
O
2
S/N1
23 dBμ V, the pin 12 output
20
40
80
mVrms
Detector output 2
80 dBμ V, the pin 12 output
60
110
160
mVrms
Signal-to-noise ratio 1
23 dBμ V, the pin 12 output
1.5
20
dB
Signal-to-noise ratio 2
S/N2
80 dBμ V, the pin 12 output
47
54
dB
Total harmonic distortion
THD
80 dBμ V, the pin 12 output
1.2
3.0
%
IF counter sensitivity
IF-C
The pin 18 (DO) output
16
26
36
dBμV
AM low cut
LOW-CUT
80 dBμ V, referenced to fm = 1 kHz,
the pin 12 output when fm = 100 Hz.
5
8
11
dB
[Current Drain]
FM tuner block
I
CC
FM
I
CC
AM
I
DD
In FM mode with no input
20
30
40
mA
AM tuner block
In AM mode with no input
10
20
30
mA
PLL block
fr = 83 MHz, X'tal = 75 kHz, With no input to the tuner block
1
2
5
mA
[PLL Characteristics]
Built-in feedback resistor
Rf
XIN
8
M
k
V
Built-in output resistor
Rd
XOUT
250
Hysteresis
V
HIS
V
OH
V
OL
1
V
OL
2
V
OL
2
V
OL
3
V
OL
4
I
IH
1
I
IH
2
I
IH
3
I
IL
1
I
IL
2
I
IL
3
I
OFF
1
I
OFF
2
I
OFFH
I
OFFL
CE, CL, DI
0.1V
DD
High-level output voltage
PD: I
O
= –1 mA
PD: I
O
= 1 mA
BO1, BO2: I
O
= 1 mA
BO1, BO2: I
O
= 5 mA
DO: I
O
= 1 mA
AOUT: I
O
= 1 mA, AIN = 2.0 V
CE, CL, DI: V
I
= 6.0 V
XIN: V
I
= V
DD
AIN: V
I
= 6.0 V
CE, CL, DI: V
I
= 0 V
XIN: V
I
= 0 V
AIN: V
I
= 0 V
AOUT, BO1, BO2: V
O
= 10 V
DO: V
O
= 6.0 V
PD: V
O
= 6.0 V
PD: V
O
= 0 V
V
DD
– 1.0
V
1.0
V
0.25
V
Low-level output voltage
1.25
V
0.25
V
0.5
V
5.0
μA
High-level input current
0.16
0.9
μA
200
nA
5.0
μA
Low-level input current
0.16
0.9
μA
200
nA
Output leakage current
5.0
μA
5.0
μA
High-level 3-state off leakage current
0.01
200
nA
Low-level 3-state off leakage current
0.01
200
nA
Operating Characteristics
at Ta = 25°C, V
CC
= 5.0 V, V
DD
= 3.0 V,
in the specified test circuit, using Yamaichi Electronics socket IC51-0362-736