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參數(shù)資料
| 型號(hào)： | LTR-209 |
| 元件分類： | 光電發(fā)射器 |
| 英文描述： | PHOTOTRANSISTOR | NPN | LED-2B |
| 中文描述： | 光電晶體管|叩|發(fā)光二極管- 2B衛(wèi)星 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 255K |
| 代理商： | LTR-209 |
10-29
I
P
Package Dimensions
NPN T-1 Modified 3
Phototransistor
LTR-209
Features
Wide range of collector currents.
Lens for high sensitivity.
Low cost plastic package.
Description
The LTR-209 consist of a NPN silicon phototransistor
mounted in a lensed, clear plastic, end looking package.
The lensing effect of the package allows an accep-
tance half angle of 8
measured from the optical axis
to the half power point. This series is mechanically and
spectrally matched to the LTE-209 series of infrared
emitting diodes.
Parameter
Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
[1.6mm (.063 in.) from body]
260
for 5 Seconds
100
30
5
mW
V
V
-40
-55
to +85
to +100
Maximum Rating
Unit
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test
Condition
I
C
=1mA
Ee=0mW/cm
2
I
=100
Ee=0mW/cm
2
I
=100
Ee=1mW/cm
2
V
CC
=5V
I
C
=1mA
R
L
=1K
V
CE
=10V
Ee=0mW/cm
2
V
=5V
Ee=1mW/cm
2
=940nm
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Emitter Saturation Voltage
Rise Time
Fall Time
Collector Dark Current
On State Collector Current
V
(BR)CEO
V
(BR)ECO
V
CE(SAT)
Tr
Tf
I
CEO
I
C(ON)
30
5
1
10
15
4
0.4
100
V
V
V
S
S
nA
mA
A
A
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is
0.25mm (.010") unless otherwise noted.
3. Protruded resin under flange is 1.5mm (.059") max.
4. Lead spacing is measured where the leads emerge from
the package.
5. Specifications are subject to change without notice.
Absolute Maximum Ratings at Ta=25
Electrical Optical Characteristics at Ta=25
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