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參數(shù)資料
| 型號(hào)： | LTE21009R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | C BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC, SOT-440A, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 55K |
| 代理商： | LTE21009R |
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE21009R
THERMAL CHARACTERISTICS
Note
1.
See “Mounting recommendations in the General part of handbook SC19a”
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
T
mb
= 25
°
C
note 1
MAX.
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
36
0.7
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
μ
A
mA
nA
I
CBO
collector cut-off current
V
CB
= 20 V; I
E
= 0
V
CB
= 40 V; I
E
= 0
V
EB
= 1.5 V; I
C
= 0
V
CE
= 5 V; I
C
= 150 mA
15
50
0.4
200
150
I
EBO
h
FE
emitter cut-off current
DC current gain
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