參數(shù)資料
型號(hào): LTC4361CDC-1#TRMPBF
廠商: LINEAR TECHNOLOGY CORP
元件分類: 電源管理
英文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
封裝: 2 X 2 MM, LEAD FREE, PLASTIC, DFN-8
文件頁數(shù): 12/16頁
文件大?。?/td> 327K
代理商: LTC4361CDC-1#TRMPBF
LTC4361-1/LTC4361-2
5
436112fa
PIN FUNCTIONS
Exposed Pad (DFN): Ground. Connection to PCB is optional.
GATE: Gate Drive for External N-Channel MOSFET. An
internal charge pump provides a 10μA pull-up current
to charge the gate of the external N-channel MOSFET. An
additional ramp circuit limits the GATE ramp rate when
turning on to 3V/ms. For slower ramp rates, connect an
external capacitor from GATE to GND. An internal clamp
limits GATE to 6V above the OUT pin voltage. An internal
GATE high comparator controls the PWRGD pin.
GATEP: Gate Drive for External P-Channel MOSFET. GATEP
connects to the gate of an optional external P-channel
MOSFET to protect against negative voltages at IN. This pin
is internally clamped to 5.8V below VIN.Aninternal2Mresis-
tor connects this pin to ground. Connect to IN if not used.
GND: Device Ground.
IN: Supply Voltage Input. Connect this pin to the input
power supply. This pin has an overvoltage threshold of
5.8V. After an overvoltage event, this pin must fall below
VIN(OV) – VOV to release the overvoltage lockout. Dur-
ing lockout, GATE is held low and the PWRGD pull-down
releases.
ON:OnControlInput.AlogiclowatONenablestheLTC4361.
A logic high at ON activates a low current pull-down at the
GATE pin and causes the LTC4361 to enter a low current
sleep mode. An internal 5μA current pulls ON down to
ground. Connect to ground or leave open if unused.
OUT: Output Voltage Sense Input for GATE Clamp. Connect
to the source of the external N-channel MOSFET to sense
the output voltage for GATE to OUT clamp.
PWRGD: Power Good Status. Open-drain output with
internal 500k resistive pull-up to OUT. Pulls low 65ms
after GATE ramps above VGATE(TH).
SENSE: Current Sense Input. Connect a sense resistor
between IN and SENSE. An overcurrent protection circuit
turns off the N-channel MOSFET when the voltage across
the sense resistor exceeds 50mV for more than 10μs.
BLOCK DIAGRAM
+
GND
436112 BD
10μA
ON
OUT
PWRGD
5.8V
500k
GATE
CONTROL
CHARGE
PUMP
OVERCURRENT
COMPARATOR
50mV
+
+
5.8V
5.7V
OVERVOLTAGE
COMPARATOR
IN
SENSE
1.8M
200k
5.8V
GATEP
5μA
1V
+
VGATE(TH)
GATE HIGH
COMPARATOR
+
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