參數(shù)資料
型號： LTC4267
廠商： Linear Technology Corporation
元件分類： 基準電壓源/電流源
英文描述： RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
中文描述： 抗輻射高效，5安培開關穩(wěn)壓器
文件頁數(shù)： 3/32頁
文件大?。?/td> 1975K
代理商： LTC4267
LTC4267
3
4267f
ELECTRICAL CHARACTERISTICS
temperature range, otherwise specifications are at T
A
= 25°C. (Note 3)
The
●
denotes the specifications which apply over the full operating
SYMBOL
V
MARGIN
I
VPORTN_ON
I
PVCC_ON
I
VPORTN_CLASS
V
PORTN
Supply Current
During Classification
I
CLASS
Current Accuracy
During Classification
R
SIGNATURE
Signature Resistance
R
INVALID
Invalid Signature Resistance
V
IH
Signature Disable
High Level Input Voltage
V
IL
Signature Disable
Low Level Input Voltage
R
INPUT
Signature Disable, Input Resistance
V
PG_OUT
Power Good Output Low Voltage
Power Good Trip Point
V
PG _FALL
V
PG_RISE
I
PG_LEAK
Power Good Leakage Current
R
ON
On-Resistance
V
ITHSHDN
Shutdown Threshold (at I
TH
/RUN)
I
THSTART
Start-Up Current Source at I
TH
/RUN
V
FB
Regulated Feedback Voltage
I
FB
V
FB
Input Current
g
m
Error Amplifier Transconductance
V
O(LINE)
Output Voltage Line Regulation
V
O(LOAD)
Output Voltage Load Regulation
I
POUT_LEAK
P
OUT
Leakage
I
LIM_HI
Input Current Limit, High Level
I
LIM_LO
Input Current Limit, Low Level
f
OSC
Oscillator Frequency
DC
ON(MIN)
Minimum Switch On Duty Cycle
DC
ON(MAX)
Maximum Switch On Duty Cycle
PARAMETER
V
CLAMP1mA
– V
TURNON
Margin
V
PORTN
Supply Current when ON
P
VCC
Supply Current
Normal Operation
Start-Up
CONDITIONS
V
PORTN
= –48V, P
OUT
,
P
W
R
G
D, SIGDISA Floating
(Note 7)
V
ITH
/RUN – PGND = 1.3V
P
VCC
– PGND = V
TURNON
– 100mV
V
PORTN
= –17.5V, P
OUT
Tied to V
PORTP
, R
CLASS
,
SIGDISA Floating (Note 8)
10mA < I
CLASS
< 40mA, –12.5V ≤ V
PORTN
≤ –21V
(Notes 9, 10)
–1.5V ≤ V
PORTN
≤ – 9.5V, P
OUT
Tied to V
PORTP
,
IEEE 802.3af 2-Point Measurement (Notes 4, 5)
–1.5V ≤ V
PORTN
≤ –9.5V, SIGDISA and P
OUT
Tied to
V
PORTP
, IEEE 802.3af 2-Point Measurement
(Notes 4, 5)
With Respect to V
PORTN
High Level Invalidates Signature (Note 11)
With Respect to V
PORTN
Low Level Enables Signature
With Respect to V
PORTN
I = 1mA V
PORTN
= –48V,
P
W
R
G
D Referenced to V
PORTN
V
PORTN
= –48V, Voltage between V
PORTN
and P
OUT
P
OUT
Falling
P
OUT
Rising
V
PORTN
= 0V,
P
W
R
G
D FET Off, V
P
W
R
G
D
= 57V
I = 350mA, V
PORTN
= –48V, Measured from
V
PORTN
to P
OUT
(Note 10)
P
VCC
– PGND = V
TURNON
+ 100mV
V
ITH
/RUN – PGND = 0V, P
VCC
– P
GND
= 8V
Referenced to PGND, P
VCC
– P
GND
= 8V (Note 12)
P
VCC
– P
GND
= 8V (Note 12)
I
TH
/RUN Pin Load = ±5μA (Note 12)
V
TURNOFF
< P
VCC
< V
CLAMP
(Note 12)
I
TH
/RUN Sinking 5μA, P
VCC
– P
GND
= 8V (Note 12)
I
TH
/RUN Sourcing 5μA, P
VCC
– P
GND
= 8V (Note 12)
V
PORTN
= 0V, Power MOSFET Off,
P
OUT
= 57V (Note 13)
V
PORTN
= –48V, P
OUT
= –43V (Note 14, 15)
0°C ≤ T
A
≤ 70°C
–40°C ≤ T
A
≤ 85°C
V
PORTN
= –48V, P
OUT
= –43V (Note 14, 15)
V
ITH
/RUN – PGND = 1.3V, P
VCC
– P
GND
= 8V
V
ITH
/RUN – PGND = 1.3V, V
FB
– PGND = 0.8V,
P
VCC
– P
GND
= 8V
V
ITH
/RUN – PGND = 1.3V, V
FB
– PGND = 0.8V,
P
VCC
– P
GND
= 8V
MIN
0.05
TYP
0.6
MAX
3
UNITS
●
●
V
mA
●
●
●
240
40
0.5
350
90
0.65
μA
μA
mA
0.35
●
±3.5
%
●
23.25
26.00
k
Ω
●
9
11.8
k
Ω
●
3
57
V
●
0.45
V
●
●
100
k
Ω
V
0.5
●
●
●
●
●
●
●
1.3
2.7
0.15
0.2
0.780
200
1.5
3.0
1.0
0.28
0.3
0.800
10
333
0.05
3
3
1.7
3.3
1
1.6
2
0.45
0.4
0.812
50
500
150
V
V
μA
Ω
Ω
V
μA
V
nA
μA/V
mV/V
mV/μA
mV/μA
μA
●
●
●
325
300
80
180
375
375
140
200
6
400
400
180
240
8
mA
mA
mA
kHz
%
70
80
90
%
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