參數(shù)資料
型號: LTC4224IDDB-2#TRPBF
廠商: Linear Technology
文件頁數(shù): 12/16頁
文件大?。?/td> 220K
描述: IC CNTRLR HOT SWAP DUAL 10-DFN
標準包裝: 2,500
類型: 熱交換控制器
應(yīng)用: 通用
內(nèi)部開關(guān):
電源電壓: 1 V ~ 6 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 10-WFDFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 10-DFN-EP(3x2)
包裝: 帶卷 (TR)
LTC4224-1/LTC4224-2
12
422412fa
APPLICATIONS INFORMATION
Next, assume that there is no load current at start-up,
and calculate the inrush current required to charge the
load capacitor. As there is no gate capacitor, the supplies
start-up in current limit. Compute the time, t
SU
, it takes
to fully charge the load capacitor:
 
 
t
SU
=
V
CC
"C
LOAD
I
TRIP
Table 3 lists the worst-case t
SU
 values assuming 30%
tolerance for load capacitances.
Table 3. Worst-Case t
SU
VOLTAGE SUPPLY
t
SU(MIN)
t
SU(MAX)
5V
0.53ms
0.65ms
3.3V
0.23ms
0.29ms
The start-up ECB blanking delay is guaranteed to be at least
2.5ms, which is longer than the t
SU
 tabulated in Table 3.
Hence, both supplies can start up successfully.
Next, verify that the thermal ratings of the selected external
MOSFETs are not exceeded during power-up or an output
short-circuit. Assuming the MOSFET dissipates power only
due to inrush current charging the load capacitor, the energy
dissipated in the MOSFET during power-up is the same
as that stored in the load capacitor after power-up. The
average power dissipated in the MOSFET is given by:
 
 
P
AVG
=
C
LOAD
" V
OUT
2
2" t
SU
The worst-case P
AVG
 is calculated to be 4.6W for both the 5V
supply and the 3.3V supply. In this example, the FDS6911
MOSFET offers a good solution. Since this MOSFET is a dual
N-channel in a single SO8 package, it must be able to tolerate
the combined power dissipation of both supplies during
the t
SU
 start-up time. The increase in steady-state junction
temperature due to power dissipated in the MOSFET is
擳 = P
AVG
"Z
TH
 where Z
TH
 is the thermal impedance.
Under this condition, the FDS6911 datasheets Transient
Thermal Impedance plot indicates that the junction tem-
perature will increase by 6.4癈 using Z
THJC
 = 0.7癈/W
(single pulse). The FDS6911s on-resistance is 17m?at
V
GS
 = 4.5V , 25癈.
The magnitude of the power pulse that results during a
severe overload is calculated to be 9.25W for the 5V sup-
ply and 9.2W for the 3.3V supply under the worst case
conditions. Assuming a worst-case circuit breaker timeout
period of 7.5ms, the junction temperature will increase by
25癈, with one supply short-circuited. If both supplies are
short-circuited, the junction temperature will increase by
50癈 in the worst-case. During auto-retry (LTC4224-2), in
the event of persistent faults at both supplies, the ample
four second cooling delay limits the increase in junction
temperature to 50癈. The SOA curves of the FDS6911
indicate that the above conditions are safe.
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