參數(shù)資料
型號(hào)： LTC3860IUH#PBF
廠商： LINEAR TECHNOLOGY CORP
元件分類： 穩(wěn)壓器
英文描述： DUAL SWITCHING CONTROLLER, 1250 kHz SWITCHING FREQ-MAX, PQCC32
封裝： 5 X 5 MM, LEAD FREE, PLASTIC, MO-220WHHD, QFN-32
文件頁數(shù)： 18/36頁
文件大?。?/td> 436K
代理商： LTC3860IUH#PBF
LTC3860
25
3860fc
APPLICATIONS INFORMATION
The curve is generated by forcing a constant input cur-
rent into the gate of a common source, current source
loaded stage and then plotting the gate voltage versus
time. The initial slope is the effect of the gate-to-source
and the gate-to-drain capacitance. The at portion of the
curve is the result of the Miller multiplication effect of the
drain-to-gate capacitance as the drain drops the voltage
across the current source load. The upper sloping line
is due to the drain-to-gate accumulation capacitance
and the gate-to-source capacitance. The Miller charge
(the increase in coulombs on the horizontal axis from
a to b while the curve is at) is specied for a given
VDS drain voltage, but can be adjusted for different VDS
voltages by multiplying by the ratio of the application
VDS to the curve specied VDS values. A way to estimate
the CMILLER term is to take the change in gate charge
from points a and b on a manufacturers data sheet and
divide by the stated VDS voltage specied. CMILLER is
the most important selection criteria for determining
the transition loss term in the top MOSFET but is not
directly specied on MOSFET data sheets. CRSS and
COS are specied sometimes but denitions of these
parameters are not included.
When the controller is operating in continuous mode
the duty cycles for the top and bottom MOSFETs are
given by:
Main Switch Duty Cycle
=
V
OUT
V
IN
Synchronous Switch Duty Cycle
=
V
IN –VOUT
V
IN
The power dissipation for the main and synchronous
MOSFETs at maximum output current are given by:
P
MAIN =
V
OUT
V
IN
I
MAX
()2(1+δ)R
DS(ON) +
V
IN
2 IMAX
2
(R
DR )(CMILLER )
1
V
CC –VTH(IL)
+
1
V
TH(IL)
(f)
P
SYNC =
V
IN VOUT
V
IN
(I
MAX )
2(1+δ)R
DS(0N)
where
δ is the temperature dependency of RDS(ON), RDR
is the effective top driver resistance, VIN is the drain po-
tential and the change in drain potential in the particular
application. VTH(IL) is the data sheet specied typical gate
threshold voltage specied in the power MOSFET data sheet
at the specied drain current. CMILLER is the calculated
capacitance using the gate charge curve from the MOSFET
data sheet and the technique previously described.
The term (1 +
δ) is generally given for a MOSFET in the
form of a normalized RDS(ON) vstemperaturecurve.Typical
values for
δ range from 0.005/°C to 0.01/°C depending
on the particular MOSFET used.
Multiple MOSFETs can be used in parallel to lower RDS(ON)
and meet the current and thermal requirements if desired.
Suitable drivers such as the LTC4449 are capable of driv-
ing large gate capacitances without signicantly slowing
transition times. In fact, when driving MOSFETs with very
low gate charge, it is sometimes helpful to slow down
the drivers by adding small gate resistors (5Ω or less) to
reduce noise and EMI caused by the fast transitions
MOSFET Driver Selection
Gate driver ICs, DRMOSs and power blocks with an interface
compatible with the LTC3860’s three-state PWM outputs
or the LTC3860’s PWM/PWMEN outputs can be used.
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