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參數(shù)資料
| 型號(hào)： | LTC3830EGN |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | High Power Step-Down Synchronous DC/DC Controllers for Low Voltage Operation |
| 中文描述： | SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, PDSO16 |
| 封裝： | 0.150 INCH, PLASTIC, SSOP-16 |
| 文件頁(yè)數(shù)： | 14/24頁(yè) |
| 文件大?。?/td> | 305K |
| 代理商： | LTC3830EGN |
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14
LTC3830/LTC3830-1
sn3830 3830fs
P
MAX
should be calculated based primarily on required
efficiency or allowable thermal dissipation. A typical high
efficiency circuit designed for 5V input and 3.3V at 10A
output might allow no more than 3% efficiency loss at full
load for each MOSFET. Assuming roughly 90% efficiency
at this current level, this gives a P
MAX
value of:
(3.3V)(10A/0.9)(0.03) = 1.1W per FET
and a required R
DS(ON)
of:
R
V
W
A
V
5
R
V
W
10
V
V
A
DS ON Q
(
DS ON Q
(
)
)
(
(3 3
)(1 1
)(
(
–3 3
)
2
)
.
)(1 1
)
(
)(
)
.
1
2
2
5
10
0 017
5
0 032
=
=
=
=
Note that the required R
DS(ON)
for Q2 is roughly twice that
of Q1 in this example. This application might specify a
single 0.03
device for Q2 and parallel two more of the
same devices to form Q1. Note also that while the required
R
DS(ON)
values suggest large MOSFETs, the power dissi-
pation numbers are only 1.1W per device or less; large
TO-220 packages and heat sinks are not necessarily
required in high efficiency applications. Siliconix Si4410DY
or International Rectifier IRF7413 (both in SO-8) or Siliconix
SUD50N03-10 (TO-252) or ON Semiconductor
MTD20N03HDL (DPAK) are small footprint surface mount
devices with R
DS(ON)
values below 0.03
at 5V of V
GS
that
work well in LTC3830 circuits. Using a higher P
MAX
value
in the R
DS(ON)
calculations generally decreases the MOSFET
cost and the circuit efficiency and increases the MOSFET
heat sink requirements.
Table 1 highlights a variety of power MOSFETs for use in
LTC3830 applications.
Inductor Selection
The inductor is often the largest component in an LTC3830
design and must be chosen carefully. Choose the inductor
value and type based on output slew rate requirements. The
maximum rate of rise of inductor current is set by the
inductor’s value, the input-to-output voltage differential and
the LTC3830’s maximum duty cycle. In a typical 5V input,
3.3V output application, the maximum rise time will be:
DC
V
L
V
L
A
μ
s
MAX
IN
O
OUT
O
(
–
)
.
=
1 615
APPLICATIOU
W
U
U
Table 1. Recommended MOSFETs for LTC3830 Applications
TYPICAL INPUT
CAPACITANCE
C
ISS
(pF)
3200
R
DS(ON)
AT 25
°
C (m
)
19
PARTS
Siliconix SUD50N03-10
TO-252
Siliconix Si4410DY
SO-8
ON Semiconductor MTD20N03HDL
DPAK
Fairchild FDS6670A
S0-8
Fairchild FDS6680
SO-8
ON Semiconductor MTB75N03HDL
DD PAK
IR IRL3103S
DD PAK
IR IRLZ44
TO-220
Fuji 2SK1388
TO-220
Note: Please refer to the manufacturer’s data sheet for testing conditions and detailed information.
RATED CURRENT (A)
15 at 25
°
C
10 at 100
°
C
10 at 25
°
C
8 at 70
°
C
20 at 25
°
C
16 at 100
°
C
13 at 25
°
C
θ
JC
(
°
C/W)
1.8
T
JMAX
(
°
C)
175
20
2700
150
35
880
1.67
150
8
3200
25
150
10
11.5 at 25
°
C
2070
25
150
9
75 at 25
°
C
59 at 100
°
C
64 at 25
°
C
45 at 100
°
C
50 at 25
°
C
36 at 100
°
C
35 at 25
°
C
4025
1
150
19
1600
1.4
175
28
3300
1
175
37
1750
2.08
150
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PDF描述 |
|---|---|
| LTC3830 | 16-Bit Bus Transceiver With 3-State Outputs 48-SSOP -40 to 85 |
| LTC3830-1 | 16-Bit Bus Transceiver With 3-State Outputs 54-BGA MICROSTAR JUNIOR -40 to 85 |
| LTC3830-1ES8 | 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 |
| LTC3830ES | 16-Bit Bus Transceiver With 3-State Outputs 54-BGA MICROSTAR JUNIOR -40 to 85 |
| LTC3830ES8 | 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LTC3830EGN#PBF | 功能描述:IC REG CTRLR BUCK PWM VM 16-SSOP RoHS:是 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:- PWM 型:電流模式 輸出數(shù):1 頻率 - 最大:1MHz 占空比:50% 電源電壓:9 V ~ 10 V 降壓:無(wú) 升壓:是 回掃:是 反相:無(wú) 倍增器:無(wú) 除法器:無(wú) Cuk:無(wú) 隔離:無(wú) 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP（0.173"，4.40mm 寬） 包裝:帶卷 (TR) |
| LTC3830EGN#TR | 功能描述:IC REG CTRLR BUCK PWM VM 16-SSOP RoHS:否 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- PWM 型:電流模式 輸出數(shù):1 頻率 - 最大:500kHz 占空比:96% 電源電壓:4 V ~ 36 V 降壓:無(wú) 升壓:是 回掃:無(wú) 反相:無(wú) 倍增器:無(wú) 除法器:無(wú) Cuk:無(wú) 隔離:無(wú) 工作溫度:-40°C ~ 125°C 封裝/外殼:24-WQFN 裸露焊盤(pán) 包裝:帶卷 (TR) |
| LTC3830EGN#TRPBF | 功能描述:IC REG CTRLR BUCK PWM VM 16-SSOP RoHS:是 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- PWM 型:電流模式 輸出數(shù):1 頻率 - 最大:500kHz 占空比:96% 電源電壓:4 V ~ 36 V 降壓:無(wú) 升壓:是 回掃:無(wú) 反相:無(wú) 倍增器:無(wú) 除法器:無(wú) Cuk:無(wú) 隔離:無(wú) 工作溫度:-40°C ~ 125°C 封裝/外殼:24-WQFN 裸露焊盤(pán) 包裝:帶卷 (TR) |
| LTC3830ES | 功能描述:IC REG CTRLR BUCK PWM VM 16-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:- PWM 型:電流模式 輸出數(shù):1 頻率 - 最大:1MHz 占空比:50% 電源電壓:9 V ~ 10 V 降壓:無(wú) 升壓:是 回掃:是 反相:無(wú) 倍增器:無(wú) 除法器:無(wú) Cuk:無(wú) 隔離:無(wú) 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP（0.173"，4.40mm 寬） 包裝:帶卷 (TR) |
| LTC3830ES#PBF | 功能描述:IC REG CTRLR BUCK PWM VM 16-SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:- PWM 型:電流模式 輸出數(shù):1 頻率 - 最大:1MHz 占空比:50% 電源電壓:9 V ~ 10 V 降壓:無(wú) 升壓:是 回掃:是 反相:無(wú) 倍增器:無(wú) 除法器:無(wú) Cuk:無(wú) 隔離:無(wú) 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP（0.173"，4.40mm 寬） 包裝:帶卷 (TR) |
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