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參數(shù)資料
| 型號： | LTC3830-1ES8 |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 |
| 中文描述： | SWITCHING CONTROLLER, 500 kHz SWITCHING FREQ-MAX, PDSO8 |
| 封裝： | 0.150 INCH, PLASTIC, SO-8 |
| 文件頁數(shù)： | 13/24頁 |
| 文件大小： | 305K |
| 代理商： | LTC3830-1ES8 |
13
LTC3830/LTC3830-1
sn3830 3830fs
Figure 12 shows a typical 5V to 3.3V application using a
doubling charge pump to generate PV
CC1
.
Power MOSFETs
Two N-channel power MOSFETs are required for most
LTC3830 circuits. These should be selected based
primarily on threshold voltage and on-resistance consid-
erations. Thermal dissipation is often a secondary con-
cern in high efficiency designs. The required MOSFET
threshold should be determined based on the available
power supply voltages and/or the complexity of the gate
drive charge pump scheme. In 3.3V input designs where
an auxiliary 12V supply is available to power PV
CC1
and
PV
CC2
, standard MOSFETs with R
DS(ON)
specified at V
GS
= 5V or 6V can be used with good results. The current
drawn from this supply varies with the MOSFETs used
and the LTC3830’s operating frequency, but is generally
less than 50mA.
LTC3830 applications that use 5V or lower V
IN
voltage and
a doubling/tripling charge pump to generate PV
CC1
and
PV
CC2
, do not provide enough gate drive voltage to fully
enhance standard power MOSFETs. Under this condition,
the effective MOSFET R
DS(ON)
may be quite high, raising
the dissipation in the FETs and reducing efficiency. Logic
level FETs are the recommended choice for 5V or lower
voltage systems. Logic level FETs can be fully enhanced
with a doubler/tripling charge pump and will operate at
maximum efficiency.
After the MOSFET threshold voltage is selected, choose the
R
DS(ON)
based on the input voltage, the output voltage,
allowable power dissipation and maximum output current.
In a typical LTC3830 circuit, operating in continuous mode,
the average inductor current is equal to the output load
current. This current flows through either Q1 or Q2 with the
power dissipation split up according to the duty cycle:
DC Q
V
V
DC Q
V
V
V
V
V
OUT
IN
OUT
IN
IN
OUT
IN
(
)
(
)
–
–
1
2
1
=
=
=
The R
DS(ON)
required for a given conduction loss can now
be calculated by rearranging the relation P = I
2
R.
R
P
DC Q
I
V
P
(
V
I
R
P
DC Q
I
V
–
P
V
V
I
DS ON Q
(
MAX Q
)(
1
LOAD
IN
MAX Q
OUT
LOAD
DS ON Q
(
MAX Q
)(
2
LOAD
IN
MAX Q
)(
IN
OUT
LOAD
)
(
)
(
)
2
)
(
)
(
)
(
)
)
(
)
(
)
1
1
2
1
2
2
2
2
2
=
=
=
=
APPLICATIOU
W
U
U
LTC3830
3830 F09a
+
D
Z
12V
1N5242
Q1
L
O
Q2
C
OUT
V
OUT
0.1
μ
F
PV
CC2
OPTIONAL
USE FOR V
IN
≥
7V
MBR0530T1
PV
CC1
G1
G2
V
IN
Figure 9a. Doubling Charge Pump
LTC3830
SS
3830 F09b
+
Q1
Q3
BSS284
R1
1M
L
O
Q2
C
OUT
V
OUT
0.1
μ
F
PV
CC2
10
μ
F
D1
D2
PV
CC1
G1
G2
V
IN
R2
200k
Q4
3906
Figure 9b. Duty Cycle Clamp Circuit
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| LTC3830-1ES8#TR | 功能描述:IC REG CTRLR BUCK PWM VM 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- PWM 型:電流模式 輸出數(shù):1 頻率 - 最大:500kHz 占空比:96% 電源電壓:4 V ~ 36 V 降壓:無 升壓:是 回掃:無 反相:無 倍增器:無 除法器:無 Cuk:無 隔離:無 工作溫度:-40°C ~ 125°C 封裝/外殼:24-WQFN 裸露焊盤 包裝:帶卷 (TR) |
| LTC3830-1ES8#TRPBF | 功能描述:IC REG CTRLR BUCK PWM VM 8-SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - 穩(wěn)壓器 - DC DC 切換控制器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- PWM 型:電流模式 輸出數(shù):1 頻率 - 最大:500kHz 占空比:96% 電源電壓:4 V ~ 36 V 降壓:無 升壓:是 回掃:無 反相:無 倍增器:無 除法器:無 Cuk:無 隔離:無 工作溫度:-40°C ~ 125°C 封裝/外殼:24-WQFN 裸露焊盤 包裝:帶卷 (TR) |
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