參數(shù)資料
型號: LTC3780EG
廠商: LINEAR TECHNOLOGY CORP
元件分類: 穩(wěn)壓器
英文描述: DIODE SCHOTTKY SINGLE 25V 200mW 0.4V-vf 200mA-IFM 10mA-IF 0.5uA-IR SOD-123 3K/REEL
中文描述: 3 A SWITCHING CONTROLLER, 440 kHz SWITCHING FREQ-MAX, PDSO24
封裝: 5.30 MM, PLASTIC, SSOP-24
文件頁數(shù): 18/28頁
文件大小: 421K
代理商: LTC3780EG
18
LTC3780
3780f
APPLICATIU
(Switch B and C shown in Figure 1). Important parameters
for the power MOSFETs are the breakdown voltage V
BR,DSS
,
threshold voltage V
GS,TH
, on-resistance R
DS(ON)
, reverse
transfer capacitance C
RSS
and maximum current I
DS(MAX)
.
The drive voltage is set by the 6V INTV
CC
supply. Conse-
quently, logic-level threshold MOSFETs must be used in
LTC3780 applications. If the input voltage is expected to
drop below 5V, then the sub-logic threshold MOSFETs
should be considered.
In order to select the power MOSFETs, the power dissi-
pated by the device must be known. For Switch A, the
maximum power dissipation happens in Boost mode,
when it remains on all the time. Its maximum power
dissipation at maximum output current is given by:
W
U
U
P
V
V
I
R
ABOOST
,
OUT
IN
OUT MAX
(
T
DS ON
(
)
)
=
2
ρ
where
ρ
T
is a normalization factor (unity at 25
°
C) account-
ing for the significant variation in on-resistance with
temperature, typically about 0.4%/
°
C as shown in Fig-
ure 9. For a maximum junction temperature of 125
°
C,
using a value
ρ
T
= 1.5 is reasonable.
Switch B operates in Buck mode as the synchronous
rectifier. Its power dissipation at maximum output current
is given by:
P
V
V
V
I
R
BBUCK
,
IN
OUT
IN
OUT MAX
(
T
DS ON
(
)
)
=
2
ρ
Switch C operates in Boost mode as the control switch. Its
power dissipation at maximum current is given by:
P
V
V
V
V
I
R
k V
I
V
C
f
CBOOST
,
OUT
IN
2
OUT
IN
OUT MAX
(
T
DS ON
(
OUT
OUT MAX
(
IN
RSS
)
)
)
=
(
)
+
2
3
ρ
where C
RSS
is usually specified by the MOSFET manufac-
turers. The constant k, which accounts for the loss caused
by reverse recovery current, is inversely proportional to
the gate drive current and has an empirical value of 1.7.
For Switch D, the maximum power dissipation happens in
Boost mode, when its duty cycle is higher than 50%. Its
maximum power dissipation at maximum output current
is given by:
P
V
V
V
V
I
R
DBUCK
,
IN
OUT
OUT
IN
OUT MAX
(
T
DS ON
(
)
)
=
2
ρ
For the same output voltage and current, Switch A has the
highest power dissipation and Switch B has the lowest
power dissipation unless a short occurs at the output.
From a known power dissipated in the power MOSFET, its
junction temperature can be obtained using the following
formula:
T
J
= T
A
+ P R
TH(JA)
JUNCTION TEMPERATURE (
°
C)
–50
ρ
T
)
1.0
1.5
150
3780 F09
0.5
0
0
50
100
2.0
Figure 9. Normalized R
DS(ON)
vs Temperature
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