TIMING CHARACTERISTICS The l denotes the specifications " />
參數(shù)資料
型號(hào): LTC2263IUJ-12#PBF
廠商: Linear Technology
文件頁(yè)數(shù): 32/34頁(yè)
文件大?。?/td> 0K
描述: IC ADC 12BIT SER/PAR 25M 40-QFN
標(biāo)準(zhǔn)包裝: 61
位數(shù): 12
采樣率(每秒): 25M
數(shù)據(jù)接口: Serial LVDS
轉(zhuǎn)換器數(shù)目: 2
功率耗散(最大): 146mW
電壓電源: 模擬和數(shù)字
工作溫度: -40°C ~ 85°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: 40-WFQFN 裸露焊盤(pán)
供應(yīng)商設(shè)備封裝: 40-QFN(6x6)
包裝: 管件
輸入數(shù)目和類(lèi)型: 2 Differential; 2 Single-Ended
配用: DC1532A-L-ND - BOARD DEMO 25MSPS LTC2263-12
DC1371A-ND - BOARD USB DATA ACQUISITION HS
LTC2265-12/
LTC2264-12/LTC2263-12
7
22654312fb
TIMING CHARACTERISTICS The
l
denotes the specifications which apply over the full operating temperature
range, otherwise specifications are at TA = 25°C. (Note 5)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Digital Data Outputs (RTERM = 100Ω Differential, CL = 2pF to GND on Each Output)
tSER
Serial Data Bit Period
Two Lanes, 16-Bit Serialization
Two Lanes, 14-Bit Serialization
Two Lanes, 12-Bit Serialization
One Lane, 16-Bit Serialization
One Lane, 14-Bit Serialization
One Lane, 12-Bit Serialization
1 / (8 fS)
1 / (7 fS)
1 / (6 fS)
1 / (16 fS)
1 / (14 fS)
1 / (12 fS)
s
tFRAME
FR to DCO Delay
(Note 8)
l
0.35 tSER
0.5 tSER
0.65 tSER
s
tDATA
DATA to DCO Delay
(Note 8)
l
0.35 tSER
0.5 tSER
0.65 tSER
s
tPD
Propagation Delay
(Note 8)
l
0.7n + 2 tSER 1.1n + 2 tSER 1.5n + 2 tSER
s
tR
Output Rise Time
Data, DCO, FR, 20% to 80%
0.17
ns
tF
Output Fall Time
Data, DCO, FR, FR, 20% to 80%
0.17
ns
DCO Cycle-to-Cycle Jitter tSER = 1ns
60
psP-P
Pipeline Latency
6
Cycles
SPI Port Timing (Note 8)
tSCK
SCK Period
Write Mode
Readback Mode, CSDO = 20pF, RPULLUP = 2k
l
40
250
ns
tS
CS to SCK Set-Up Time
l
5
ns
tH
SCK to CS Set-Up Time
l
5
ns
tDS
SDI Set-Up Time
l
5
ns
tDH
SDI Hold Time
l
5
ns
tDO
SCK Falling to SDO Valid
Readback Mode, CSDO = 20pF, RPULLUP = 2k
l
125
ns
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: All voltage values are with respect to GND with GND and OGND
shorted (unless otherwise noted).
Note 3: When these pin voltages are taken below GND or above VDD, they
will be clamped by internal diodes. This product can handle input currents
of greater than 100mA below GND or above VDD without latchup.
Note 4: When these pin voltages are taken below GND they will be
clamped by internal diodes. When these pin voltages are taken above VDD
they will not be clamped by internal diodes. This product can handle input
currents of greater than 100mA below GND without latchup.
Note 5: VDD = OVDD = 1.8V, fSAMPLE = 65MHz (LTC2265), 40MHz
(LTC2264), or 25MHz (LTC2263), 2-lane output mode, differential ENC+/
ENC= 2VP-P sine wave, input range = 2VP-P with differential drive, unless
otherwise noted.
Note 6: Integral nonlinearity is defined as the deviation of a code from a
best fit straight line to the transfer curve. The deviation is measured from
the center of the quantization band.
Note 7: Offset error is the offset voltage measured from –0.5 LSB when
the output code flickers between 0000 0000 0000 and 1111 1111 1111 in
2’s complement output mode.
Note 8: Guaranteed by design, not subject to test.
Note 9: VDD = OVDD = 1.8V, fSAMPLE = 65MHz (LTC2265), 40MHz
(LTC2264), or 25MHz (LTC2263), 2-lane output mode, ENC+ = single-
ended 1.8V square wave, ENC= 0V, input range = 2VP-P with differential
drive, unless otherwise noted. The supply current and power dissipation
specifications are totals for the entire chip, not per channel.
Note 10: Recommended operating conditions.
Note 11: The maximum sampling frequency depends on the speed grade
of the part and also which serialization mode is used. The maximum serial
data rate is 1000Mbps, so tSER must be greater than or equal to 1ns.
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