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參數(shù)資料
| 型號(hào)： | LTC1982 |
| 廠商： | Linear Technology Corporation |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Single and Dual Micropower High Side Switch Controllers in SOT-23 |
| 中文描述： | 單和雙微控制器高端開關(guān)采用SOT - 23 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 154K |
| 代理商： | LTC1982 |
LTC1981/LTC1982
3
SUPPLY VOLTAGE, V
CC
(V)
1.5
G
5.5
1982 G01
2.5
3.5
4.5
5.0
2.0
3.0
4.0
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
T
A
= 25
°
C
GATE DRIVE VOLTAGE
(V
GS
COMMON SOURCE)
GATE DRIVE –V
(V
GS
SOURCE FOLLOWER)
SUPPLY VOLTAGE (V)
1.0
0
S
μ
A
5
15
20
25
2.0
3.0 3.5
5.5
1982 G02
I
SUPPLY
10
1.5
2.5
4.0 4.5 5.0
T
A
= 25
°
C
LTC1981 OR
BOTH CHANNELS ON
LTC1982
EITHER CHANNEL ON
LTC1982
GATE DRIVE VOLTAGE (V)
0
G
μ
A
100
10
1
0.1
3
4
6
7
1
2
5
8
1982 G03
V
CC
= 3.3V
V
CC
= 2.7V
V
CC
= 1.8V
T
A
= 25
°
C
V
CC
= 5V
SHDN LOGIC INPUT VOLTAGE (V)
0
1
S
μ
A
60
50
40
30
20
10
0
1981/82 G04
2
T
A
= 25
°
C
V
CC
= 3V
SHDN1 TIED
TO SHDN2
SHDN LOGIC INPUT VOLTAGE (V)
0
1
S
μ
A
300
250
200
150
100
50
0
1981/82 G05
2
T
A
= 25
°
C
V
CC
= 5V
SHDN1 TIED
TO SHDN2
SYMBOL
V
OL
PARAMETER
GDR Output Voltage Low
GATE Drive Ready Trip Point
CONDITIONS
I
SINK
= 100
μ
A, V
CC
= 1.8V
GATE Voltage Rising
V
CC
= 1.8V
V
CC
= 2.7V
V
CC
= 3.3V
V
CC
= 5V
GATE Voltage Falling
After GATE is Above the GDR Trip Threshold
10k Pull-Up to V
CC
MIN
TYP
0.05
MAX
0.4
UNITS
G
V
G
G
G
G
3.85
5.78
6.17
6.17
4.05
6.08
6.5
6.5
2
2
4.25
6.38
6.82
6.82
V
V
V
V
%
μ
s
GDR Hysteresis
GDR Delay
Note 1
: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2:
All voltage values are with respect to GND.
Note 3:
the LTC1982E is guaranteed to meet performance specifications
from 0
°
C to 70
°
C. Specifications over the –40
°
C to 85
°
C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
Note 4:
Guaranteed by design not subject to test.
ELECTRICAL CHARACTERISTICS
temperature range, otherwise specifications are at T
A
= 25
°
C. V
CC
= 5V unless otherwise specified. C
GATE 1
= C
GATE 2
= C
GATE
= 1000pF.
(LTC1981 only)
The
G
denotes the specifications which apply over the full operating
TYPICAL PERFOR U
Supply Current vs Supply Voltage
GATE Drive Voltage vs Supply
Voltage
GATE Drive Current (LTC1982)
I
SUPPLY
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| LTC1982ES6#PBF | 制造商:Linear Technology 功能描述:MOSFET DRVR 2-OUT Hi Side 6-Pin TSOT-23 制造商:Linear Technology 功能描述:IC, MOSFET DRIVER, HIGH SIDE, SOT-23-6, Device Type:High Side, Module Configuration:High Side, Supply Voltage Min:1.8V, Supply Voltage Max:5.5V, Driver Case Style:SOT-23, No. of Pins:6, Input Delay:110s, Output Delay:12s , RoHS Compliant: Yes 制造商:Linear Technology 功能描述:DP-Power Controller, CUT TAPE Dual Micropower Hi Side Sw Controller |
| LTC1982ES6#TR | 功能描述:IC CTRLR SW DUAL MCRPWR SOT23-6 RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LTC1982ES6#TRM | 功能描述:IC CTRLR SW HI-SIDE DUAL SOT23-6 RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
| LTC1982ES6#TRMPBF | 功能描述:IC CTRLR SW HI-SIDE SGL SOT23-6 RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:95 系列:- 配置:高端和低端，獨(dú)立 輸入類型:非反相 延遲時(shí)間:160ns 電流 - 峰:290mA 配置數(shù):1 輸出數(shù):2 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:10 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:管件 產(chǎn)品目錄頁面:1381 (CN2011-ZH PDF) |
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