DIGITAL INPUTS AND DIGITAL OUTPUTS The ●
參數(shù)資料
型號(hào)： LTC1867LAIGN#PBF
廠商： Linear Technology
文件頁數(shù)： 11/16頁
文件大小： 0K
描述： IC ADC 16BIT 8CH 175KSPS 16SSOP
標(biāo)準(zhǔn)包裝： 100
位數(shù)： 16
采樣率（每秒）： 175k
數(shù)據(jù)接口： MICROWIRE?，串行，SPI?
轉(zhuǎn)換器數(shù)目： 1
功率耗散（最大）： 2.7mW
電壓電源： 單電源
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 16-SSOP（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 16-SSOP
包裝： 管件
輸入數(shù)目和類型： 8 個(gè)單端，單極；8 個(gè)單端，雙極；4 個(gè)差分，單極；4 個(gè)差分，雙極
配用： DC873A-ND - BOARD SAR ADC LTC1867L
DC806A-ND - BOARD SAR ADC LTC1867
LTC1863L/LTC1867L
4
1863l7lfc
DIGITAL INPUTS AND DIGITAL OUTPUTS The ● denotes the specications which apply over the
full operating temperature range, otherwise specications are at TA = 25°C. (Note 5)
SYMBOL
PARAMETER
CONDITIONS
LTC1863L/LTC1867L/LTC1867LA
UNITS
MIN
TYP
MAX
IIN
Digital Input Current
VIN = 0V to VDD
●
±10
μA
CIN
Digital Input Capacitance
2pF
VOH
High Level Output Voltage (SDO)
VDD = 2.7V, IO = –10μA
VDD = 2.7V, IO = –200μA
●
23
2.68
2.65
V
VOL
Low Level Output Voltage (SDO)
VDD = 2.7V, IO = 160μA
VDD = 2.7V, IO = 1.6μA
●
0.05
0.15
0.4
V
ISOURCE
Output Source Current
SDO = 0V
–9.7
mA
ISINK
Output Sink Current
SDO = VDD
6mA
Hi-Z Output Leakage
Hi-Z Output Capacitance
CS/CONV = High, SDO = 0V or VDD
CS/CONV = High (Note 10)
●
±10
15
μA
pF
Data Format
Unipolar
Bipolar
Straight Binary
Two’s Complement
POWER REQUIREMENTS The ● denotes the specications which apply over the full operating temperature
range, otherwise specications are at TA = 25°C. (Note 5)
SYMBOL
PARAMETER
CONDITIONS
LTC1863L/LTC1867L/LTC1867LA
UNITS
MIN
TYP
MAX
VDD
Supply Voltage
(Note 9)
2.7
3.6
V
IDD
Supply Current
fSAMPLE = 175ksps, Internal REF
NAP Mode
SLEEP Mode
●
0.75
170
0.2
1
3
mA
μA
PDISS
Power Dissipation
fSAMPLE = 175ksps
●
22.7
mW
TIMING CHARACTERISTICS The ● denotes the specications which apply over the full operating temperature
range, otherwise specications are at TA = 25°C. (Note 5)
SYMBOL
PARAMETER
CONDITIONS
LTC1863L/LTC1867L/LTC1867LA
UNITS
MIN
TYP
MAX
fSAMPLE
Maximum Sampling Frequency
●
175
kHz
tCONV
Conversion Time
●
3.2
3.7
μs
tACQ
Acquisition Time
●
2.01
1.68
μs
fSCK
SCK Frequency
20
MHz
t1
CS/CONV High Time
Short CS/CONV Pulse Mode
●
40
100
ns
t2
SDO Valid After SCK↓
CL = 25pF (Note 11)
●
22
47
ns
t3
SDO Valid Hold Time After SCK↓
CL = 25pF
●
517
ns
t4
SDO Valid After CS/CONV↓
CL = 25pF
●
20
40
ns
t5
SDI Setup Time Before SCK↑
●
15
–6
ns
t6
SDI Hold Time After SCK↑
●
15
6
ns
t7
SLEEP Mode Wake-Up Time
CREFCOMP = 10μF, CVREF = 2.2μF
80
ms
t8
Bus Relinquish Time After CS/CONV↑
CL = 25pF
●
30
50
ns
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: All voltage values are with respect to GND (unless otherwise
noted).
Note 3: When these pin voltages are taken below GND or above VDD, they
will be clamped by internal diodes. This product can handle input currents
of greater than 100mA without latchup.
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