參數(shù)資料
型號: LT5512EUF
廠商: LINEAR TECHNOLOGY CORP
元件分類: 無繩電話/電話
英文描述: 1kHz-3GHz High Signal Level Down-Converting Mixer
中文描述: TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PQCC16
封裝: 4 X 4 MM, PLASTIC, MO-220WGGC, QFN-16
文件頁數(shù): 8/12頁
文件大小: 267K
代理商: LT5512EUF
LT5512
8
5512f
The LT5512 consists of a double-balanced mixer, RF
buffer amplifier, high-speed limiting LO buffer, and bias/
enable circuits. The RF, LO and IF ports are differential. All
three ports can be matched from 1kHz to 3GHz, although
the IC has been optimized for downconverter applications
where the RF and LO input signals are high frequency and
the IF output frequency ranges from 1kHz up to 2GHz. Low
side or high side LO injection can be used.
RF Input Port
The RF input buffer has been designed to simplify imped-
ance matching while improving LO-RF isolation and noise
figure. A simplified schematic is shown in Figure 4 with the
associated external impedance matching elements for a
1.9GHz application. Each RF input requires a low resis-
tance DC return to ground capable of sinking 15mA. This
can be accomplished with the center-tap of a balun as
shown in Figure 4, or bias chokes connected from Pins 2
and 3 to ground.
APPLICATIU
W
U
U
differential input impedance up to the desired value for the
balun input. The following example shows how to design
the low-pass impedance transformation network for the
RF input.
From Table 1, the differential input impedance at 1900MHz
is 20.6 + j22.8. As shown in Figure 5, the 22.8
reactance
is split, with one half on each side of the 20.6
load
resistor. The matching network will consist of additional
inductance in series with the internal inductance and a
capacitor in parallel with the desired 100
source imped-
ance. The capacitance (C4) and inductance are calculated
as follows.
n = R
S
/R
L
= 100/20.6 = 4.85
Q =
n – 1 = 1.963
X
C
= R
S
/Q = 100/1.963 = 50.9
C4 = 1/(
ω
Xc) = 1.6pF (use 1.5pF)
X
L
= (R
L
Q) = (20.6 1.963) = 40.4
X
EXT
= X
L
– X
INT
= 40.4 – 22.8 = 17.6
L
EXT
= (X
EXT
/
ω
) = 1.47nH
The external inductance is split in half (0.74nH), with each
half connected between the pin and the shunt capacitor, as
shown in Figure 5. The inductance is implemented with
short (2mm) high-impedance printed transmission lines,
which yield a compact board layout. Finally, the 2:1balun
transforms the 100
differential impedance down to a
50
single-ended input for the RF signal.
Table 1. RF Input Differential Impedance
Frequency
Differential Input
(MHz)
Impedance
10
18.2 + j0.14
44
18.0 + j0.26
240
18.1 + j2.8
450
18.1 + j5.2
950
18.7 + j11.3
1900
20.6 + j22.8
2150
21.4 + j26.5
2450
22.5 + j30.5
2700
24.1 + j34.7
Differential S11
Mag
0.467
0.470
0.471
0.473
0.479
0.503
0.512
0.522
0.530
Angle
179.6
178.6
172.6
166.3
150.8
124.3
116.9
109.2
101.7
Figure 4. RF Input with External
Matching for a 1.9GHz Application
Table 1 lists the differential input impedance and differen-
tial reflection coefficient between Pins 2 and 3 for several
common RF frequencies. As shown in Figures 4 and 5,
low-pass impedance matching is used to transform the
5512 F04
TL2
Z
= 72
θ
= 8.1
°
AT 1.9GHz
TL1
Z
= 72
θ
= 8.1
°
AT 1.9GHz
2
3
15mA
15mA
C4
1.5pF
100
V
CC
V
BIAS
T1
1:2
LDB211G9010C-001
1
2
3
4
5
RF
IN
50
LT5512
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