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參數(shù)資料
| 型號： | LT3757MPMSE#TRPBF |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | SWITCHING REGULATOR, 1000 kHz SWITCHING FREQ-MAX, PDSO10 |
| 封裝： | 3 X 3 MM, LEAD FREE, PLASTIC, MSOP-10 |
| 文件頁數(shù)： | 13/36頁 |
| 文件大小： | 436K |
| 代理商： | LT3757MPMSE#TRPBF |
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LT3757
20
3757fc
applicaTions inForMaTion
where VSN is the snubber capacitor voltage. A smaller
VSN results in a larger snubber loss. A reasonable VSN is
2 to 2.5 times of:
VOUT NP
NS
LLKistheleakageinductanceoftheprimarywinding,which
is usually specified in the transformer characteristics. LLK
canbeobtainedbymeasuringtheprimaryinductancewith
the secondary windings shorted. The snubber capacitor
value(CCN)canbedeterminedusingthefollowingequation:
CCN =
VSN
VSN RCN f
where VSN is the voltage ripple across CCN. A reasonable
VSN is 5% to 10% of VSN. The reverse voltage rating of
DSN should be higher than the sum of VSN and VIN(MAX).
Flyback Converter: Sense Resistor Selection
In a flyback converter, when the power switch is turned
on, the current flowing through the sense resistor
(ISENSE) is:
ISENSE = ILP
Set the sense voltage at ILP(PEAK) to be the minimum of
the SENSE current limit threshold with a 20% margin. The
sense resistor value can then be calculated to be:
RSENSE =
80mV
ILP(PEAK)
Flyback Converter: Power MOSFET Selection
For the flyback configuration, the MOSFET is selected with
a VDC rating high enough to handle the maximum VIN, the
reflected secondary voltage and the voltage spike due to
theleakageinductance.ApproximatetherequiredMOSFET
VDC rating using:
BVDSS > VDS(PEAK)
where:
VDS(PEAK) = VIN(MAX) + VSN
The power dissipated by the MOSFET in a flyback con-
verter is:
PFET = I2M(RMS) RDS(ON) + 2 V2DS(PEAK) IL(MAX)
CRSS f/1A
The first term in this equation represents the conduction
losses in the device, and the second term, the switching
loss. CRSS is the reverse transfer capacitance, which is
usually specified in the MOSFET characteristics.
From a known power dissipated in the power MOSFET, its
junction temperature can be obtained using the following
equation:
TJ = TA + PFET θJA = TA + PFET (θJC + θCA)
TJ must not exceed the MOSFET maximum junction
temperature rating. It is recommended to measure the
MOSFETtemperatureinsteadystatetoensurethatabsolute
maximum ratings are not exceeded.
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