LTC3412A
3
3412afb
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
SVIN
Signal Input Voltage Range
2.25
5.5
V
VFB
Regulated Feedback Voltage
(Note 3)
●
0.784
0.800
0.816
V
IFB
Voltage Feedback Leakage Current
0.1
0.2
μA
ΔVFB
Reference Voltage Line Regulation
VIN = 2.7V to 5.5V (Note 3)
●
0.04
0.2
%/V
VLOADREG
Output Voltage Load Regulation
Measured in Servo Loop, VITH = 0.36V
●
0.02
0.2
%
Measured in Servo Loop, VITH = 0.84V
●
– 0.02
– 0.2
%
ΔVPGOOD
Power Good Range
±7.5
±9%
RPGOOD
Power Good Pull-Down Resistance
120
200
Ω
IQ
Input DC Bias Current
(Note 4)
Active Current
VFB = 0.78V, VITH = 1V
250
330
μA
Sleep
VFB = 1V, VITH = 0V
64
80
μA
Shutdown
VRUN = 0V, VMODE = 0V
0.02
1
μA
fOSC
Switching Frequency
ROSC = 294kΩ
0.88
1
1.1
MHz
Switching Frequency Range
(Note 6)
0.3
4
MHz
fSYNC
SYNC Capture Range
(Note 6)
0.3
4
MHz
RPFET
RDS(ON) of P-Channel FET
ISW = 1A (Note 7)
77
110
m
Ω
RNFET
RDS(ON) of N-Channel FET
ISW = –1A (Note 7)
65
90
m
Ω
ILIMIT
Peak Current Limit
4.5
6
A
VUVLO
Undervoltage Lockout Threshold
1.75
2
2.25
V
ILSW
SW Leakage Current
VRUN = 0V, VIN = 5.5V
0.1
1
μA
VRUN
RUN Threshold
0.5
0.65
0.8
V
IRUN
RUN/SS Leakage Current
1
μA
ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VIN = 3.3V unless otherwise specified.
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3412AE is guaranteed to meet performance specifications
from 0
°C to 85°C. Specifications over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls. The LTC3412I is guaranteed to meet
specified performance over the full – 40
°C to 85°C operating temperature
range.
Note 3: The LTC3412A is tested in a feedback loop that adjusts VFB to
achieve a specified error amplifier output voltage (ITH).
Note 4: Dynamic supply current is higher due to the internal gate charge
being delivered at the switching frequency.
Note 5: TJ is calculated from the ambient temperature TA and power
dissipation as follows: LTC3412AFE: TJ = TA + PD (38°C/W)
LTC3412AEUF: TJ = TA + PD (34°C/W)
Note 6: 4MHz operation is guaranteed by design and not production tested.
Note 7: Switch on resistance is guaranteed by design and test condition in
the UF package and by final test correlation in the FE package.