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參數(shù)資料
| 型號(hào)： | LT262A |
| 廠商： | Sharp Corporation |
| 英文描述： | GaAs Hall IC for Noncontact Switch(Alternating magnetic field-type*) |
| 中文描述： | 砷化鎵霍爾IC的非接觸式開(kāi)關(guān)（交變磁場(chǎng)型*） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 23K |
| 代理商： | LT262A |
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices
shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device spcification sheets before using any SHARP device.
LT262A
I
Features
Operation by small magnet due to high sensitivity
Operating point<10mT
Combining a GaAs Hall device and an IC in a compact
package (2.9
X
1.5
X
1.1mm)
Wide operation temperature range obtained by GaAs Hall
device (-20 to +125C)
Long life time due to noncontact-type
I
Operating Explanation
I
Outline Dimensions
(Unit : Fmm)
GaAs Hall IC for Noncontact Switch
(Alternating magnetic field-type*)
*Zero-cross is not warranted.
Hall IC
LT262A
I
Applications
FDD
HDD
Water meter
Car stereo
Microswitch, etc.
*1 Soldering time : within 10 seconds
I
Absolute Maximum Ratings
Parameter
(T
a
=25C)
Rating
8
8
5
100
-20 to +125
-55 to +150
260
Supply voltage
Output voltage
Output current
Power dissipation
Operating temperature
Storage temperature
Soldering temperature
*1
Symbol
V
CC
V
OUT
I
O
P
D
T
opr
T
stg
T
sol
Unit
V
V
mA
mW
C
C
C
I
Electrical Characteristics
Parameter
(T
a
=25C)
Unit
mT
mT
mT
Operating magnetic flux density
Hysteresis breadth
Operating voltage
Supply current
Low level output voltage
Output leakage current
Operating point temperature drift
Symbol
B
OP
B
RP
B
H
V
CC
I
CC
V
OL
I
OH
B
OP
Condition
V
CC
=5V
V
OO
=5V
R
L
=10k
V
CC
=5V, B=<-10mT
I
O
=4mA, B>=10mT
V
CC
=5V, B=<-10mT, V
OO
=5V
V
CC
=5V, T
a
=-20C to +80C
MIN.
-
-10
-
3.5
-
-
-
-6
TYP.
-
-
-
-
-
-
-
-
MAX.
10
-
5
6.5
10.5
0.4
10
6
V
mA
V
μ
A
mT
+
-
H
REG
Terminal connections
Hall
device
2.7±0.3
1.5±0.2
1
2
4
3
0
0
0
0
1
2
0
0
2
4-R0.2
S
Z
0.6
0.6
0
0
(
0
+
-
1
+
-
1 : V
CC
2 : V
3 : Don't use.
4 : GND
Y
X
Hall device center line
X : +0.05±0.23mm against package center
Y : -0.05±0.1mm against package lead center between
No.2 and No.3 terminals
Z : 0.81±0.15mm from package surface
*No.3 terminal and the section of leads (both sides
of package in X direction) are connected with the
terminal of internal IC. Be careful in connecting other circuits.
B
RP
0 B
OP
+B
Magnetic flux density
<Alternating magnetic field-type>
O
As for dimensions of tape-packaged products, refer to page 44 .
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