參數(shù)資料
型號(hào)： LT1P53A
廠商： Sharp Corporation
英文描述： 3.3X2.9mm, 1.1mm Thickness,Milky Diffusion Chip LED Devices
中文描述： 3.3X2.9mm，1.1mm的厚度，銀河系擴(kuò)散LED器件芯片
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 89K
代理商： LT1P53A
(Notice)
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
(Internet)
Data for sharp's optoelectronic/power device is provided for internet.(Address http://www.sharp.co.jp/ecg/)
99
LT1
J
53A series
Chip LED Device
LT1
J
53A series
I
Outline Dimensions
(0.3)
(0.3)
(0.3)
(0.3)
3.3
0.9
1.5
0.9
Milky diffusion
2
2
1
0
0
0
0
0
0
0
0
0
(4-R0.2)
(R0.2)
0
+
-
1
+
-
1
2
Pin connections
1 Anode
2 Cathode
Unspecified tolerance:
±
0.2
I
Radiation Diagram
0
0
40
20
60
-20
+20
+40
+60
+80
-40
-60
-80
-30
-50
+10
100
-10
+30
+50
+70
+90
-90
-70
80
100
R
DC
0.13
0.40
0.40
0.27
0.27
0.27
Pulse
0.67
0.67
0.67
0.67
0.67
0.67
Model No.
Radiation color
Radiation material
Power dissipation
P
(mW)
Forward current
I
F
(mA)
Derating factor
(mA/C)
Peak forward current
I
FM*1
(mA)
Operating temperature
T
opr
(C)
Storage temperature
T
stg
(C)
Soldering temperature
T
sol*2
(C)
Reverse voltage
V
R
(V)
(T
a
=25C)
LT1P53A
LT1D53A
LT1S53A
LT1H53A
LT1E53A
LT1K53A
*1 Duty ratio=1/10, Pulse width=0.1ms
*2 For 3s or less at the temperature of hand soldering. Temperature of reflow soldering is shown on the below page.
GaP
GaAsP on GaP
GaAsP on GaP
GaAsP on GaP
GaP
GaP
23
85
85
50
50
50
10
30
30
20
20
20
50
50
50
50
50
50
5
5
5
5
5
5
350
350
350
350
350
350
Red
Red
Sunset orange
Yellow
Yellow-green
Green
-25 to +85
-25 to +85
-25 to +85
-25 to +85
-25 to +85
-25 to +85
-25 to +100
-25 to +100
-25 to +100
-25 to +100
-25 to +100
-25 to +100
I
Absolute Maximum Ratings
TYP
1.9
2.0
2.0
1.9
1.85
MAX
2.3
2.8
2.8
2.5
2.5
2.5
Model No.
Lens type
Forward voltage
V
F
(V)
λ
p
(nm)
TYP
695
635
610
585
565
555
I
V
(mcd)
TYP
1.4
9.6
7.8
3.7
4.8
2.2
I
F
(mA)
5
20
20
10
10
10
I
F
(mA)
5
20
20
10
10
10
I
F
(mA)
5
20
20
10
10
10
(MH
Z
)
V
R
(V)
4
4
4
4
4
4
I
R
(
μ
A)
MAX
10
10
10
10
10
10
C
t
(pF)
TYP
55
20
15
35
35
40
λ
(nm)
TYP
100
35
35
30
30
25
Peak emission wavelength
Luminous intensity
Spectrum radiation bandwidth
Reverse current
Page for
characteristics
diagrams
→
→
→
→
→
→
Terminal capacitance
(T
a
=25C)
LT1P53A
LT1D53A
LT1S53A
LT1H53A
LT1E53A
LT1K53A
1.95
1
1
1
1
1
1
Milky
diffusion
I
Electro-optical Characteristics
(Unit : mm)
(T
a
=25C)
3.3
2.9mm, 1.1mm Thickness,
Milky Diffusion Chip LED Devices
相關(guān)PDF資料
PDF描述
LT1S90A DEVICE SPECIFICATION FOR Light Emitting Diode
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LT1T73A 2.7X51.45mm, 0.9mm Thickness, Compact Milky Diffusion Chip LED Devices
LT1T73A Round, Jacket Mass-Terminated Cable, 3659/37 28 AWG, .050 (1.27)
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