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參數(shù)資料
| 型號： | LT1D51A |
| 廠商： | Sharp Corporation |
| 英文描述： | 3.3X2.9mm, 1.1mm Thickness, Colored Diffusion Chip LED Devices |
| 中文描述： | 3.3X2.9mm，1.1mm的厚度，彩色LED器件芯片擴散 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 101K |
| 代理商： | LT1D51A |
(Notice)
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
(Internet)
Data for sharp's optoelectronic/power device is provided for internet.(Address http://www.sharp.co.jp/ecg/)
8
LT1
J
51A series
Chip LED Device
LT1
J
51A series
I
Outline Dimensions
(0.3)
(0.3)
(0.3)
(0.3)
3.3
0.9
1.5
0.9
Colored diffusion
2
2
1
0
0
0
0
0
0
0
0
0
(4-R0.2)
(R0.2)
0
+
-
1
+
-
Pin connections
1 Anode
2 Cathode
Unspecified tolerance:
±
0.2
1
2
I
Radiation Diagram
0
0
40
20
60
-20
+20
+40
+60
+80
-40
-60
-80
-30
-50
+10
-10
+30
+50
+70
+90
-90
-70
80
100
R
DC
0.40
0.13
0.40
0.40
0.27
0.27
0.27
Pulse
0.67
0.67
0.67
0.67
0.67
0.67
0.67
Model No.
Radiation color
Radiation material
Power dissipation
P
(mW)
Forward current
I
F
(mA)
Derating factor
(mA/C)
Peak forward current
I
FM
(mA)
Operating temperature
T
opr
(C)
Storage temperature
T
stg
(C)
Soldering temperature
T
sol*3
(C)
Reverse voltage
V
R
(V)
(T
a
=25C)
LT1T51A
LT1P51A
LT1D51A
LT1S51A
LT1H51A
LT1E51A
LT1K51A
*1 Duty ratio=1/10, Pulse width=0.1ms
*2 For 3s or less at the temperature of hand soldering. Temperature of reflow soldering is shown on the below page.
GaAlAs on GaAs
GaP
GaAsP on GaP
GaAsP on GaP
GaAsP on GaP
GaP
GaP
66
23
85
85
50
50
50
30
10
30
30
20
20
20
50
50
50
50
50
50
50
5
5
5
5
5
5
5
350
350
350
350
350
350
350
Red(High-luminosity)
Red
Red
Sunset orange
Yellow
Yellow-green
Green
-25 to +85
-25 to +85
-25 to +85
-25 to +85
-25 to +85
-25 to +85
-25 to +85
-25 to +100
-25 to +100
-25 to +100
-25 to +100
-25 to +100
-25 to +100
-25 to +100
I
Absolute Maximum Ratings
TYP
1.75
1.9
2.0
2.0
1.9
1.95
1.95
MAX
2.2
2.3
2.8
2.8
2.5
2.5
2.5
Model No.
Lens type
Forward voltage
V
F
(V)
λ
p
(nm)
TYP
660
695
635
610
585
565
555
I
V
(mcd)
TYP
9.0
1.1
8.4
6.8
3.3
3.6
1.7
I
F
(mA)
20
5
20
20
10
10
10
I
F
(mA)
20
5
20
20
10
10
10
I
F
(mA)
20
5
20
20
10
10
10
(MH
Z
)
V
R
(V)
4
4
4
4
4
4
4
I
R
(
μ
A)
MAX
10
10
10
10
10
10
10
C
t
(pF)
TYP
30
55
20
15
35
35
40
λ
(nm)
TYP
20
100
35
35
30
30
25
Peak emission wavelength
Luminous intensity
Spectrum radiation bandwidth
Reverse current
Page for
characteristics
diagrams
→
→
→
→
→
→
→
Terminal capacitance
(T
a
=25C)
LT1T51A
LT1P51A
LT1D51A
LT1S51A
LT1H51A
LT1E51A
LT1K51A
1
1
1
1
1
1
1
Colored
diffusion
I
Electro-optical Characteristics
(Unit : mm)
(T
a
=25C)
3.3
2.9mm, 1.1mm Thickness,
Colored Diffusion Chip LED
Devices
T type: Polarity faces in the opposite direction.
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