參數(shù)資料
型號: LT1616ES6
英文描述: Analog IC
中文描述: 模擬IC
文件頁數(shù): 3/16頁
文件大?。?/td> 257K
代理商: LT1616ES6
3
LT1614
PARAMETER
Switch V
CESAT
CONDITIONS
I
SW
= 500mA (25
°
C, 0
°
C)
I
SW
= 500mA (70
°
C)
V
SHDN
= V
IN
V
SHDN
= 0V
MIN
TYP
295
MAX
350
400
20
–10
210
215
0.25
0.1
50
UNITS
mV
mV
Shutdown Pin Current
10
–5
200
μ
A
μ
A
mV
mV
LBI Threshold Voltage
190
185
G
LBO Output Low
LBO Leakage Current
LBI Input Bias Current (Note 5)
Low-Battery Detector Gain
Switch Leakage Current
I
SINK
= 10
μ
A
V
LBI
= 250mV, V
LBO
= 5V
V
LBI
= 150mV
1M
Load
V
SW
= 5V
0.1
0.01
10
1000
0.01
V
μ
A
nA
V/V
μ
A
3
ELECTRICAL C
temperature range, otherwise specifications are at T
A
= 25
°
C. Commercial Grade 0
°
C to 70
°
C. V
IN
= 1.5V, V
SHDN
= V
IN
unless
otherwise noted.
HARA TERISTICS
Note 1:
Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2:
The LT1614C is guaranteed to meet specified performance from
0
°
C to 70
°
C and is designed, characterized and expected to meet these
extended temperature limits, but is not tested at –40
°
C and 85
°
C. The
LT1614I is guaranteed to meet the extended temperature limits.
Industrial Grade –40
°
C to 85
°
C. V
IN
= 1.5V, V
SHDN
= V
IN
unless otherwise noted.
PARAMETER
Quiescent Current
CONDITIONS
MIN
TYP
1
5
–1.24
–4.5
0.6
0.3
1.1
0.8
MAX
2
10
–1.27
–7.5
1.1
0.8
1.25
1.0
6
UNITS
mA
V
SHDN
= 0V
μ
A
V
μ
A
Feedback Voltage
NFB Pin Bias Current (Note 3)
Reference Line Regulation
G
–1.21
–2
V
NFB
= –1.24V
1V
V
IN
2V
2V
V
IN
6V
–40
°
C
85
°
C
G
%/V
%/V
Minimum Input Voltage
V
V
V
Maximum Input Voltage
Error Amp Transconductance
Error Amp Voltage Gain
Switching Frequency
Maximum Duty Cycle
Switch Current Limit (Note 4)
Switch V
CESAT
G
I = 5
μ
A
16
100
600
80
1.2
250
330
10
–5
200
0.1
0.1
5
1000
0.01
μ
mhos
V/V
kHz
G
500
70
0.75
750
G
%
A
I
SW
= 500mA (–40
°
C)
I
SW
= 500mA (85
°
C)
V
SHDN
= V
IN
V
SHDN
= 0V
350
400
20
–10
220
0.25
0.3
30
mV
mV
μ
A
μ
A
mV
Shutdown Pin Current
LBI Threshold Voltage
LBO Output Low
LBO Leakage Current
LBI Input Bias Current (Note 5)
Low-Battery Detector Gain
Switch Leakage Current
G
180
I
SINK
= 10
μ
A
V
LBI
= 250mV, V
LBO
= 5V
V
LBI
= 150mV
1M
Load
V
SW
= 5V
V
μ
A
nA
V/V
μ
A
3
Note 3:
Bias current flows out of NFB pin.
Note 4:
Switch current limit guaranteed by design and/or correlation to
static tests. Duty cycle affects current limit due to ramp generator.
Note 5:
Bias current flows out of LBI pin.
The
G
denotes the specifications which apply over the full operating
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