IS Supply Current Per Amplifier 1.8 3." />
參數(shù)資料
型號(hào)： LT1457S8#TRPBF
廠(chǎng)商： Linear Technology
文件頁(yè)數(shù)： 3/8頁(yè)
文件大小： 0K
描述： IC PREC OP-AMP JFET DUAL 8-SOIC
標(biāo)準(zhǔn)包裝： 2,500
放大器類(lèi)型： J-FET
電路數(shù)： 2
轉(zhuǎn)換速率： 4 V/µs
增益帶寬積： 1.7MHz
電流 - 輸入偏壓： 7pA
電壓 - 輸入偏移： 220µV
電流 - 電源： 1.8mA
電壓 - 電源，單路/雙路(±)： ±4.5 V ~ 18 V
工作溫度： 0°C ~ 70°C
安裝類(lèi)型： 表面貼裝
封裝/外殼： 8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 8-SO
包裝： 帶卷 (TR)
3
LT1457
GBW
Gain-Bandwidth Product
(Note 5)
1.0
1.7
1.0
1.7
MHz
IS
Supply Current Per Amplifier
1.8
3.0
1.8
3.0
mA
Channel Separation
DC to 5kHz, VIN = ±10V
132
130
dB
LT1457AC
LT1457C/LT1457S8
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
VS = ±15V, TA = 25°C,VCM = 0V unless otherwise noted. (Note 1)
ELECTRICAL CHARACTERISTICS
VS = ±15V, VCM = 0V, 0°C ≤ TA ≤ 70°C, unless otherwise noted.
ELECTRICAL CHARACTERISTICS
LT1457AC
LT1457C/LT1457S8
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
VOS
Input Offset Voltage
LT1457AC/C
q
350
1100
400
1800
V
LT1457S8
q
500
2300
V
Average Temperature Coefficient of
q
310
4
16
V/°C
Input Offset Voltage
IOS
Input Offset Current
Warmed Up, TA = 85°C
0.1
0.5
0.1
0.6
nA
IB
Input Bias Current
Warmed Up, TA = 85°C
±0.2
±0.7
±0.2
±0.9
nA
AVOL
Large-Signal Voltage Gain
VO = ±10V, RL = 2k
q
40
120
30
110
V/mV
CMRR
Common-Mode Rejection Ratio
VCM = ±10.4V
q
84
97
80
95
dB
PSRR
Power Supply Rejection Ratio
VS = ±5V to ±17V
q
86
100
83
98
dB
VOUT
Output Voltage Swing
RL = 2k
q
±12 ±12.7
±12
±12.6
V
IS
Supply Current Per Amplifier
TA = – 40°C
3.8
mA
TA = 85°C
1.7
mA
VS = ±15V, VCM = 0V, –40°C ≤ TA ≤ 85°C, unless otherwise noted. (Note 6)
ELECTRICAL CHARACTERISTICS
The q denotes the specifications which apply over the full operating
temperature range.
Note 1: Typical parameters are defined as the 60% yield of distributions of
individual amplifiers; i.e., out of 100 LT1457s (200 op amps) typically 120
will be better than the indicated specification.
Note 2: This parameter is tested on a sample basis only.
Note 3: Current noise is calculated from the formula: in = (2qIb)
1/2, where
q = 1.6 x 10–19 coulomb. The noise of source resistors up to 1G
swamps the contribution of current noise.
Note 4: This parameter is not 100% tested.
Note 5: Gain-Bandwidth product is not tested. It is guaranteed by design
and by inference from the slew rate measurement.
Note 6: The LT1457 is not tested and not quality-assurance-sampled at
–40
°C and at 85°C. These specifications are guaranteed by design,
correlation, and/or inference from 0
°C, 25°C, and 70°C tests.
LT1457AC
LT1457C/LT1457S8
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
VOS
Input Offset Voltage
LT1457AC/C
q
250
900
330
1500
V
LT1457S8
q
400
1900
V
Average Temperature Coefficient of
q
310
4
16
V/°C
Input Offset Voltage (Note 4)
IOS
Input Offset Current
Warmed Up, TA = 70°C
18
150
20
250
pA
IB
Input Bias Current
Warmed Up, TA = 70°C
±50
±250
±60
±350
pA
AVOL
Large-Signal Voltage Gain
VO = ±10V, RL = 2k
q
70
220
50
200
V/mV
CMRR
Common-Mode Rejection Ratio
VCM = ±10.4V
q
85
98
80
96
dB
PSRR
Power Supply Rejection Ratio
VS = ±4.5V to ±18V
q
87
102
84
100
dB
VOUT
Output Voltage Swing
RL = 2k
q
±12 ±12.8
±12
±12.8
V
IS
Supply Current Per Amplifier
q
3.2
mA
TA = 70°C
1.7
mA
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