參數(shù)資料
型號(hào): LT1312CS8
廠商: LINEAR TECHNOLOGY CORP
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: Single PCMCIA VPP Driver/Regulator
中文描述: FIXED POSITIVE LDO REGULATOR, PDSO8
封裝: 0.150 INCH, PLASTIC, SO-8
文件頁(yè)數(shù): 10/12頁(yè)
文件大?。?/td> 259K
代理商: LT1312CS8
10
LT1312
APPLICATIO
S I
N
FOR
ATIO
U
Transient and Switching Performance
The LT1312 is designed to produce minimal overshoot with
capacitors in the range of 1
μ
F to 10
μ
F. Larger capacitor
values can be used with a slowing of rise and fall times.
The positive output slew rate is determined by the 330mA
current limit and the output capacitor. The rise time for a
0V to 12V transition is approximately 40
μ
s, the rise time
for a 10
μ
F capacitor is roughly 400
μ
s (see the Transient
Response curves in the Typical Performance Characteris-
tics section).
The fall time from 12V to 0V is set by the output capacitor
and an internal pull-down current source which sinks
about 30mA. This source will fully discharge a 1
μ
F capaci-
tor in less than 1ms.
Thermal Considerations
Power dissipated by the device is the sum of two compo-
nents: output current multiplied by the input-output differ-
ential voltage I
OUT
×
(V
IN
– V
OUT
), and ground pin current
multiplied by supply voltage I
GND
×
V
IN
.
The ground pin current can be found by examining the
Ground Pin Current curves in the Typical Performance
Characteristics section.
Heat sinking, for surface mounted devices, is accom-
plished by using the heat spreading capabilities of the PC
board and its copper traces.
The junction temperature of the LT1312 must be limited to
125
°
C to ensure proper operation. Use Table 1 in conjunc-
tion with the typical performance graphs, to calculate the
power dissipation and die temperature for a particular
application and ensure that the die temperature does not
exceed 125
°
C under any operating conditions.
W
U
Table 1. S8 Package*
COPPER AREA
TOPSIDE
2500 sq mm
1000 sq mm
225 sq mm
1000 sq mm
*Device is mounted topside.
THERMAL RESISTANCE
BACKSIDE
2500 sq mm
2500 sq mm
2500 sq mm
1000 sq mm
BOARD AREA (JUNCTION-TO-AMBIENT)
2500 sq mm
2500 sq mm
2500 sq mm
1000 sq mm
120
°
C/W
120
°
C/W
125
°
C/W
131
°
C/W
Calculating Junction Temperature
Example: given an output voltage of 12V, an input supply
voltage of 14V, an output current of 100mA, and a
maximum ambient temperature of 50
°
C, what will the
maximum junction temperature be
Power dissipated by the device will be equal to:
I
OUT
×
(V
S
– VPP
OUT
) + (I
GND
×
V
IN
)
where:
I
OUT
= 100mA
V
IN
= 14V
I
GND
at (I
OUT
= 100mA, V
IN
= 14V) = 5mA
so,
P
D
= 100mA
×
(14V – 12V) + (5mA
×
15V) = 0.275W
Using Table 1, the thermal resistance will be in the range
of 120
°
C/W to 131
°
C/W depending upon the copper area.
So the junction temperature rise above ambient will be
less than or equal to:
0.275W
×
131
°
C/W = 36
°
C
The maximum junction temperature will then be equal to
the junction temperature rise above ambient plus the
maximum ambient temperature or:
T
JMAX
= 50
°
C + 36
°
C = 86
°
C.
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