參數(shù)資料
型號(hào): LT1168CS8
廠商: LINEAR TECHNOLOGY CORP
元件分類: 運(yùn)動(dòng)控制電子
英文描述: Micropower single-supply CMOS Instrumentation Amplifier
中文描述: INSTRUMENTATION AMPLIFIER, 80 uV OFFSET-MAX, 0.4 MHz BAND WIDTH, PDSO8
封裝: 0.150 INCH, PLASTIC, SOP-8
文件頁數(shù): 5/20頁
文件大?。?/td> 301K
代理商: LT1168CS8
5
LT1168
Note 1:
Absolute Maximum Ratings are those values beyond which the life
of a device may be imparied.
Note 2:
If the input voltage exceeds the supplies, the input current should
be limited to less than 20mA.
Note 3:
A heat sink may be required to keep the junction temperature
below absolute maximum.
Note 4:
The LT1168AC/LT1168C are guaranteed functional over the
operating temperature range of –40
°
C and 85
°
C.
Note 5:
The LT1168AC/LT1168C are guaranteed to meet specified
performance from 0
°
C to 70
°
C. The LT1168AC/LT1168C are designed,
characterized and expected to meet specified performance from –40
°
C to
85
°
C but are not tested or QA sampled at these temperatures. The
LT1168AI/LT1168I are guaranteed to meet specified performance from
–40
°
C to 85
°
C.
Note 6:
Typical parameters are defined as the 60% of the yield parameter
distribution.
Note 7:
Does not include the tolerance of the external gain resistor R
G
.
Note 8:
This parameter is measured in a high speed automatic tester that
does not measure the thermal effects with longer time constants. The
magnitude of these thermal effects are dependent on the package used,
heat sinking and air flow conditions.
Note 9:
This parameter is not 100% tested.
Note 10:
Hysteresis in offset voltage is created by package stress that
differs depending on whether the IC was previously at a higher or lower
temperature. Offset voltage hysteresis is always measured at 25
°
C, but
the IC is cycled to 85
°
C I-grade (or 70
°
C C-grade) or –40
°
C I-grade
(0
°
C C-grade) before successive measurement. 60% of the parts will
pass the typical limit on the data sheet.
The
G
denotes the specifications which apply over the –40
°
C
T
A
85
°
C
temperature range. V
S
=
±
15V, V
CM
= 0V, R
L
= 10k unless otherwise noted. (Note 5)
ELECTRICAL CHARACTERISTICS
LT1168AI
TYP
LT1168I
TYP
SYMBOL
V
OST
V
OSI
V
OSIH
V
OSO
V
OSOH
V
OSI
/T
V
OSO
/T
I
OS
I
OS
/T
I
B
I
B
/T
V
CM
PARAMETER
Total Input Referred Offset Voltage
Input Offset Voltage
Input Offset Voltage Hysteresis
Output Offset Voltage
Output Offset Voltage Hysteresis (Notes 7, 10)
Input Offset Drift (RTI)
Output Offset Drift
Input Offset Current
Input Offset Current Drift
Input Bias Current
Input Bias Current Drift
Input Voltage Range
CONDITIONS (Note 6)
V
OST
= V
OSI
+ V
OSO
/G
MIN
MAX
MIN
MAX
UNITS
G
20
3.0
180
30
0.05
0.8
110
0.3
120
1.4
75
25
3.0
200
30
0.06
1
120
0.3
220
1.4
100
μ
V
μ
V
μ
V
μ
V
(Notes 7, 10)
G
G
500
600
G
(Note 9)
(Note 9)
G
0.3
5
550
0.4
6
700
μ
V/
°
C
μ
V/
°
C
G
G
pA
G
pA/
°
C
G
500
800
pA
G
pA/
°
C
V
S
=
±
2.3V to
±
5V
V
S
=
±
5V to
±
18V
1k Source Imbalance,
V
CM
= 0V to
±
10V
G = 1
G = 10
G = 100
G = 1000
V
S
=
±
2.3V to
±
18V
G = 1
G = 10
G = 100
G = 1000
G
G
–V
S
+ 2.1
–V
S
+ 2.1
+V
S
– 1.3
+V
S
– 1.4
–V
S
+ 2.1
–V
S
+ 2.1
+V
S
– 1.3
+V
S
– 1.4
V
V
CMRR
Common Mode
Rejection Ratio
G
G
G
G
86
98
114
116
90
105
118
133
81
95
112
112
90
105
118
133
dB
dB
dB
dB
PSRR
Power Supply
Rejection Ratio
G
G
G
G
100
120
125
128
112
125
132
140
420
95
115
120
125
112
125
132
140
420
dB
dB
dB
dB
μ
A
V
V
mA
V/
μ
s
I
S
V
OUT
Supply Current
Output Voltage Swing
G
650
650
V
S
=
±
2.3V to
±
5V
V
S
=
±
5V to
±
18V
G
G
–V
S
+ 1.4
–V
S
+ 1.6
15
0.22
–V
S
+ 1.6
+V
S
– 1.3
+V
S
– 1.5
–V
S
+ 1.4
–V
S
+ 1.6
15
0.22
–V
S
+ 1.6
+V
S
– 1.3
+V
S
– 1.5
I
OUT
SR
V
REF
Output Current
Slew Rate
Voltage Range
G
22
0.41
22
0.42
G
(Note 9)
G
+V
S
– 1.6
+V
S
– 1.6
V
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