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參數(shù)資料
| 型號： | LT0H12M |
| 廠商： | Sharp Corporation |
| 英文描述： | DOOR RACK SOLID BLACK 19X63,0 |
| 中文描述： | 全息激光（1束）的磁光盤 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 39K |
| 代理商： | LT0H12M |
TEC N 940525
Laser diode
λ
=780nm
Input
R
L
=180
V
R
=15V
Output
*6 Measuring method is shown below
*1 Output power form LD chip
*2 Oscillation mode, transverse single mode
*3 An angle for 50% of the peak intensity (full angle at half maximum).
*4 Values in each element. Elements other than subject elements shall be measured
while the anode and the cathode are short-circuited to each other
*5 Illumination intensity by CIE standard light (Tungsten lamp)
I
Electro-optical Characteristics
Parameter
Threshold current
Operating current
Operating voltage
Wavelength *2
Monitor current
Angle
Radiation
Characteristics
*3
Symbol
Ith
Iop
Vop
λ
p
Im
θ
//
θ
⊥
Condition
-
MIN
-
-
-
770
0.1
8
20.
-20
-2
-3
-80
TYP
60
115
1.85
780
0.3
9.5
26
-
-
-
-
MAX
80
150
2.2
795
Units
mA
mA
V
nm
mA
%
μ
m
P
o
=30mW *1
P
o
=30mW *1 ,V
R
=15V
2
Parallel
13
32
20
2
3
80
Laser
(without
hologram
glass)
Perpen-
dicular
Ripple
P
O
=30mW *1
Emission
Point
accuracy
Angle
Positon
-
20mW
Differentioal efficiency
η
Iop(30mW) - Iop(10mW)
0.3
0.55
0.8
mW/mA
Sensitivity
Dark current
Terminal capacitance
Reverse voltage
Dark current
S
I
D
Ct
V
R
I
d
-
-
-
10
-
8
-
-
2.8
3
170
460
10
-
μ
A/mW
nA
pF
V
nA
Monitor
Photodiode
V
R
=15V
150
-
-
20
5
5.4
270
670
140
I
R
=10
μ
A
V
R
=15V
15
-
0.6
0.8
85
260
-
Photodiode
for signal
detection
Terminal capacitance
Ct
V
R
=15V,f=1MH
Z
pF
Short circuit current *4
Isc
Ev=1000Lx *5
nA
Response time *6
t
r
,
t
f
V
R
=15V,R
L
=180
ns
A,B
A,B
A
B
A
B
A,B
D2
D3
D4
D1
Input
Output
90%
10%
t
r
t
f
50%
φ
//
φ
⊥
X
,Y,Z
LT0H12M
(Tc=25C)
D2,D3 A
D1,D4 B
Segment No.
*7 Applicabledivisions correspond to pattern segment No.
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