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參數(shù)資料
| 型號(hào)： | LSK389-B-71 |
| 廠商： | LINEAR INTEGRATED SYSTEMS INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET |
| 中文描述： | 40 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71 |
| 封裝： | METAL PACKAGE-6 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 121K |
| 代理商： | LSK389-B-71 |
Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
FEATURES
ULTRA LOW NOISE
TIGHT MATCHING
HIGH BREAKDOWN VOLTAGE
HIGH GAIN
LOW CAPACITANCE
IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation @ +125 °C
Maximum Currents
Gate Forward Current
Maximum Voltages
Gate to Source
Gate to Drain
e
n
= 0.9nV/
√
Hz (typ)
|V
GS1-2
| = 20mV max
BV
GSS
= 40V max
Y
fs
= 20mS (typ)
25pF typ
-65 to +150 °C
-55 to +135 °C
400mW
I
G(F)
= 10mA
V
GSS
= 40V
V
GDS
= 40V
MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
Differential Gate to Source Cutoff
Voltage
I
Gate to Source Saturation Current Ratio
MIN
TYP MAX
UNIT
CONDITIONS
GS2
GS1
V
V
20
mV
V
DS
= 10V, I
D
= 1mA
DSS2
DSS1
I
0.9
-
V
DS
= 10V, V
GS
= 0V
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN
TYP MAX
UNITS
CONDITIONS
BV
GSS
V
GS(OFF)
Gate to Source Breakdown Voltage
40
V
V
DS
= 0, I
D
= 100μA
V
DS
= 10V, I
D
= 0.1μA
Gate to Source Pinch-off Voltage
0.15
2
V
LSK389A
2.6
6.5
LSK389B
6
12
I
DSS
Drain to Source Saturation
Current
LSK389C
10
20
mA
V
DS
= 10V, V
GS
= 0
I
GSS
Gate to Source Leakage Current
200
pA
V
GS
= -30V, V
DS
= 0
LSK389
ULTRA LOW NOISE
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Integrated Systems
*For equivalent single version, see LSK170 family.
1
2
3
4
8
7
6
5
SOIC-A
S1
D1
SS
G1
G2
SS
D2
S2
5
BOTTOM VIEW
TO-71
1
2
3
6
7
D1
G1
S1
S2
D2
G2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LSK389-C-71 | ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET |
| LSL9R30120G2 | ISL9R30120G2 |
| LSM835 | 8 Amp Schottky Rectifier |
| LSM845 | 8 Amp Schottky Rectifier |
| LSM835G | Schottky Rectifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LSK389-B-SOIC-8 | 制造商:LINEAR 制造商全稱:LINEAR 功能描述:ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET |
| LSK389C_SOIC | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a monolithic matched dual JFET on a single chip |
| LSK389C_TO-71 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:a monolithic matched dual JFET on a single chip |
| LSK389-C-71 | 制造商:LINEAR 制造商全稱:LINEAR 功能描述:ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET |
| LSK389-C-SOIC-8 | 制造商:LINEAR 制造商全稱:LINEAR 功能描述:ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET |
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