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參數(shù)資料
| 型號(hào)： | LSCR6C60 |
| 廠(chǎng)商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Silicon Controlled Rectifiers |
| 中文描述： | 可控硅整流器 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 634K |
| 代理商： | LSCR6C60 |
Absolute Maximum Ratings
( T
J
= 25°C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
V
DRM
Repetitive Peak Off-State Voltage
600
V
I
T(AV)
Average On-State Current
Half Sine Wave : T
C
= 106 °C
3.8
A
I
T(RMS)
R.M.S On-State Current
180° Conduction Angle
6
A
I
TSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
66
A
I
2
t
I
2
t
for Fusing
t = 8.3ms
21
A
2
s
di/dt
Critical rate of rise of on-state current
50
A/
P
GM
Forward Peak Gate Power Dissipation
5
W
P
G(AV)
Forward Average Gate Power Dissipation
0.5
W
I
FGM
Forward Peak Gate Current
2
A
V
RGM
Reverse Peak Gate Voltage
5.0
V
T
J
Operating Junction Temperature
- 40 ~ 125
°C
T
STG
Storage Temperature
- 40 ~ 150
°C
S CR6C60
Dec, 2002. Rev. 3
Features
◆
Repetitive Peak Off-State Voltage : 600V
◆
R.M.S On-State Current ( I
T(RMS)
= 6 A )
◆
Low On-State Voltage (1.4V(Typ.)@ I
TM
)
General Description
Standard gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
3. Gate
○
1. Cathode
Symbol
○
▼
1/5
S emiWell
Semiconductor
Silicon Controlled Rectifiers
○
2. Anode
3
21
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
TO-126
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