參數(shù)資料
型號： LS4148-GS18
廠商： VISHAY SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： Diode Small Signal Switching 100V 0.3A 2-Pin Quadro MELF SOD-80 T/R
中文描述： Diodes (General Purpose, Power, Switching) 100V Io/150mA 2.0 Amp IFSM
文件頁數(shù)： 2/4頁
文件大?。?/td> 92K
代理商： LS4148-GS18
LS4148, LS4448
Vishay Semiconductors
www.vishay.com
Rev. 1.9, 31-Jul-12
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
2
Document Number: 85561
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 -
Forward Current vs. Forward Voltage
Fig. 2 -
Forward Current vs. Forward Voltage
Fig. 3 -
Reverse Current vs. Reverse Voltage
Fig. 4 -
Diode Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
I
F
= 5 mA
I
F
= 50 mA
I
F
= 100 mA
V
R
= 20 V
V
R
= 20 V, T
j
= 150 °C
V
R
= 75 V
I
R
= 100 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
Diode capacitance
V
R
= 0, f = 1 MHz, V
HF
= 50 mV
I
F
= I
R
= 10 mA, i
R
= 1 mA
I
= 10 mA, V
R
= 6 V,
i
R
= 0.1 x I
R
, R
L
= 100
PART
LS4448
LS4148
LS4448
SYMBOL
V
F
V
F
V
F
I
R
I
R
I
R
MIN.
620
TYP.
MAX.
720
1000
1000
25
50
5
UNIT
mV
mV
mV
nA
μA
μA
Forward voltage
860
930
Reverse current
Breakdown voltage
V
(BR)
100
V
C
D
t
rr
4
8
pF
ns
Reverse recovery time
t
rr
4
ns
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
I
F
w
a
u
r
V
F
- For
w
ard
V
oltage (
V
)
2.0
16640
LS4148
T
j
= 25 °C
Scattering Limit
LS4448
T
j
= 25 °C
Scattering Limit
0
0.4
0.8
1.2
1.6
0.1
1
10
100
1000
I
F
w
a
u
r
V
F
- For
w
ard
V
oltage (
V
)
2.0
16642
1
10
100
1000
I
R
-
v
e
u
r
V
R
- Re
v
erse
V
oltage (
V
)
10
1
100
94 9098
T
j
= 25 °C
Scattering Limit
0.1
1
10
0
0.5
1.0
1.5
2.0
3.0
C
D
100
94 9099
2.5
V
R
- Re
v
erse
V
oltage (
V
)
f = 1 MHz
T
j
= 25 °C
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